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    Reducing nitride residue by changing the nitride film surface property
    3.
    发明授权
    Reducing nitride residue by changing the nitride film surface property 失效
    通过改变氮化物膜表面性能来还原氮化物残留物

    公开(公告)号：US5858861A

    公开(公告)日：1999-01-12

    申请号：US79525

    申请日：1998-05-15

    申请人： Fu-Tien Weng ,  Chih-Hsiung Lee

    发明人： Fu-Tien Weng ,  Chih-Hsiung Lee

    IPC分类号： H01L21/033 ,  H01L21/316 ,  H01L21/32 ,  H01L21/30 ,  H01L21/00

    CPC分类号： H01L21/0217 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/0331 ,  H01L21/31662 ,  H01L21/32

    摘要： A new method of changing the surface property of a nitride film from hydrophobic to hydrophillic and thereby reducing nitride residue after photolithography is described. A pad oxide layer is provided on the surface of a semiconductor substrate. A nitride layer is deposited overlying the pad oxide layer. Thereafter, the surface of the nitride layer is cleaned wherein the surface is changed from hydrophobic to hydrophillic. The nitride layer is coated with a photoresist film which is developed to leave an opening where the field oxidation region is to be formed. The nitride layer and pad oxide layer are etched away where they are not covered by the photoresist film to expose a portion of the semiconductor substrate. The exposed portion of the semiconductor substrate is oxidized to form a field oxidation region in the fabrication of an integrated circuit.

    摘要翻译： 描述了一种将氮化膜的表面性质从疏水性改变为亲水性并由此在光刻后减少氮化物残余物的新方法。 衬垫氧化物层设置在半导体衬底的表面上。 在衬垫氧化物层上沉积氮化物层。 此后，清洁氮化物层的表面，其中表面从疏水性变为亲水性。 氮化物层被涂覆有光致抗蚀剂膜，其被显影以留下要形成场氧化区的开口。 蚀刻氮化物层和焊盘氧化物层，其中它们不被光致抗蚀剂膜覆盖以暴露半导体衬底的一部分。 在集成电路的制造中，半导体衬底的暴露部分被氧化以形成场氧化区域。

    MICROLENS STRUCTURE AND FABRICATION METHOD THEREOF
    4.
    发明申请
    MICROLENS STRUCTURE AND FABRICATION METHOD THEREOF 有权
    微晶结构及其制造方法

    公开(公告)号：US20130170047A1

    公开(公告)日：2013-07-04

    申请号：US13340178

    申请日：2011-12-29

    申请人： Fu-Tien WENG ,  Yu-Kun Hsiao

    发明人： Fu-Tien WENG ,  Yu-Kun Hsiao

    IPC分类号： G02B3/00 ,  B05D5/06 ,  H05H1/24 ,  G02B1/10

    CPC分类号： G02B3/0006 ,  C23C16/0272 ,  C23C16/402 ,  C23C16/505 ,  G02B1/115 ,  G02B3/0012 ,  H01L27/14627

    摘要： A microlens structure is provided. The microlens structure includes a microlens element having a first refraction index. A first film is disposed on the microlens element, wherein the first film has a second refraction index less than the first refraction index. A second film is disposed on the first film, wherein the second film has a third refraction index less than the second refraction index and greater than a refraction index of air. Further, a fabrication method of the microlens structure is also provided.

    摘要翻译： 提供微透镜结构。 微透镜结构包括具有第一折射率的微透镜元件。 第一膜设置在微透镜元件上，其中第一膜具有小于第一折射率的第二折射率。 第二膜设置在第一膜上，其中第二膜具有小于第二折射率的第三折射率并且大于空气的折射率。 此外，还提供了微透镜结构的制造方法。

    Wafer level package and mask for fabricating the same
    6.
    发明申请
    Wafer level package and mask for fabricating the same 有权
    晶圆级封装和掩模制造相同

    公开(公告)号：US20090102005A1

    公开(公告)日：2009-04-23

    申请号：US11976058

    申请日：2007-10-19

    申请人： Fu-Tien Weng ,  Yung-Shun Liao ,  Yi-Chuan Lo ,  Bii-Cheng Chang

    发明人： Fu-Tien Weng ,  Yung-Shun Liao ,  Yi-Chuan Lo ,  Bii-Cheng Chang

    IPC分类号： H01L31/0203 ,  G03F1/00

    CPC分类号： H01L27/14618 ,  H01L23/10 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An exemplary wafer level package comprises a semiconductor wafer with a plurality of semiconductor chips of perfect polygonal shapes thereon. A circuit-free area is defined over the semiconductor wafer to electrically isolate the semiconductor chips. A dam structure is substantially formed over the circuit-free area, wherein a portion of the dam structure formed around an edge of the semiconductor wafer is formed with a plurality via holes therein. A transparent substrate is formed over the semiconductor wafer, defining a plurality of cavities between the semiconductor chips and the transparent substrate, wherein the transparent substrate is supported by the dam structure.

    摘要翻译： 示例性晶片级封装包括其上具有多个完美多边形形状的多个半导体芯片的半导体晶片。 在半导体晶片上限定无电路区域以电绝缘半导体芯片。 大坝结构基本上形成在无电路区域上，其中围绕半导体晶片的边缘形成的坝结构的一部分在其中形成有多个通孔。 在半导体晶片之上形成透明基板，在半导体芯片和透明基板之间限定多个空腔，其中透明基板由坝结构支撑。

    Material to improve image sensor yield during wafer sawing
    7.
    发明授权
    Material to improve image sensor yield during wafer sawing 失效
    材料可以提高晶圆锯切时的图像传感器产量

    公开(公告)号：US07071032B2

    公开(公告)日：2006-07-04

    申请号：US10431275

    申请日：2003-05-07

    申请人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Fu-Tien Weng

    发明人： Hung-Jen Hsu ,  Yu-Kung Hsiao ,  Chih-Kung Chang ,  Sheng-Liang Pan ,  Fu-Tien Weng

    IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

    CPC分类号： H01L21/6836 ,  H01L21/78 ,  H01L27/14683 ,  H01L2221/68327

    摘要： A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

    摘要翻译： 提供了一种新的方法，在将晶片分离成单独的芯片的过程之前处理晶片。 已经在其上形成CMOS图像传感器装置的晶片的第一表面涂覆有不溶于水的材料层。 通过使晶片的第二表面与带接触而将晶片附接到带。 通过接近晶片的第一表面并通过首先穿过已经涂覆在晶片的第一表面上的材料层，然后通过晶片锯切，停止在带的表面，将晶片分离。 将彻底的水冲洗施加到单片晶片的表面，接着进行晶片清洁以应用特定的化学品用于此目的。 单片模具现在从胶带中取出并通过将模具安装，引线接合，将模具包围在模具化合物中并标记包装件的步骤进一步处理。

    Effective method to improve sub-micron color filter sensitivity
    9.
    发明申请
    Effective method to improve sub-micron color filter sensitivity 有权
    提高亚微米滤色片灵敏度的有效方法

    公开(公告)号：US20050242271A1

    公开(公告)日：2005-11-03

    申请号：US10833565

    申请日：2004-04-28

    申请人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Chin-Kung Chang ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin-Chen Kuo

    发明人： Fu-Tien Weng ,  Yu-Kung Hsiao ,  Chin-Kung Chang ,  Hung-Jen Hsu ,  Yi-Ming Dai ,  Chin-Chen Kuo

    IPC分类号： H01L27/00 ,  H01L27/146 ,  H01L31/00 ,  H01L31/0216 ,  H01L31/0232

    CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627

    摘要： An image sensor device and method for forming said device are described. The image sensor structure comprises a substrate with photodiodes, an interconnect structure formed on the substrate, a color filter layer above the interconnect structure, a first microlens array, an overcoat layer, and a second microlens array. A key feature is that a second microlens has a larger radius of curvature than a first microlens. Additionally, each first microlens and second microlens is a flat convex lens. Thus, a thicker second microlens with a short focal length is aligned above a thinner first microlens having a long focal length. A light column that includes a first microlens, a second microlens and a color filter region is formed above each photodiode. A second embodiment involves replacing a second microlens in each light column with a plurality of smaller second microlenses that focus light onto a first microlens.

    摘要翻译： 描述了用于形成所述装置的图像传感器装置和方法。 图像传感器结构包括具有光电二极管的衬底，形成在衬底上的互连结构，在互连结构上方的滤色器层，第一微透镜阵列，外涂层和第二微透镜阵列。 一个关键特征是第二微透镜具有比第一微透镜更大的曲率半径。 另外，每个第一微透镜和第二微透镜是平凸透镜。 因此，具有短焦距的较厚的第二微透镜在具有长焦距的较薄的第一微透镜上对准。 在每个光电二极管上方形成包括第一微透镜，第二微透镜和滤色器区域的光柱。 第二实施例涉及用多个将光聚焦到第一微透镜上的多个较小的第二微透镜替换每个光柱中的第二微透镜。