- 专利标题： Field effect transistor with electroplated metal gate
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申请号： US10694793申请日： 2003-10-29
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公开(公告)号： US06967131B2公开(公告)日： 2005-11-22
- 发明人: Katherine L. Saenger , Cyril Cabral, Jr. , Emanuel I. Cooper , Hariklia Deligianni , Panayotis Andricacos , Philippe M. Vereecken
- 申请人： Katherine L. Saenger , Cyril Cabral, Jr. , Emanuel I. Cooper , Hariklia Deligianni , Panayotis Andricacos , Philippe M. Vereecken
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corp.
- 当前专利权人： International Business Machines Corp.
- 当前专利权人地址： US NY Armonk
- 代理机构： Connolly Bove Lodge & Hutz
- 代理商 Robert M. Trepp, Esq.
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/288 ; H01L21/336 ; H01L29/49 ; H01L29/78 ; H01L21/8283
摘要：
Disclosed is a method for making a metal gate for a FET, wherein the metal gate comprises at least some material deposited by electroplating as well as an FET device comprising a metal gate that is at least partially plated. Further disclosed is a method for making a metal gate for a FET wherein the metal gate comprises at least some plated material and the method comprises the steps of: selecting a substrate having a top surface and a recessed region; conformally depositing a thin conductive seed layer on the substrate; and electroplating a filler gate metal on the seed layer to fill and overfill the recessed region.
公开/授权文献
- US20050095852A1 Field effect transistor with electroplated metal gate 公开/授权日：2005-05-05
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