发明授权
- 专利标题： Semiconductor integrated device and method of fabrication thereof
- 专利标题（中）： 半导体集成器件及其制造方法
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申请号： US08964457申请日： 1997-11-04
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公开(公告)号： US06969671B2公开(公告)日： 2005-11-29
- 发明人: Hiromi Shimazu , Tsuyoshi Baba , Masayuki Suzuki , Hideo Miura
- 申请人： Hiromi Shimazu , Tsuyoshi Baba , Masayuki Suzuki , Hideo Miura
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corporation
- 当前专利权人： Renesas Technology Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP
- 优先权： JP8-296520 19961108
- 主分类号： H01L23/485
- IPC分类号： H01L23/485 ; H01L23/522 ; H01L21/28
摘要：
A diffusion layer 3a of a silicon substrate, a polycrystalline silicon material 10, or a gate electrode 12 is connected to a conductive film 8 through a titanium silicide film 6 within a contact hole 5 provided in an insulating film 4. The titanium silicide film 6 is formed by the silicide reaction between a titanium film 7 and the silicon. The upper limit of the thickness of the titanium silicide film 6, and the upper limit of the titanium film 7 are specified by the internal stress within the conductive film 8.
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