发明授权
- 专利标题： Adjusting the frequency of film bulk acoustic resonators
- 专利标题（中）： 调整膜体声波谐振器的频率
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申请号： US10448915申请日： 2003-05-30
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公开(公告)号： US06975184B2公开(公告)日： 2005-12-13
- 发明人: Li-Peng Wang , Michael Dibattista , Seth Fortuna , Qing Ma , Valluri Rao
- 申请人： Li-Peng Wang , Michael Dibattista , Seth Fortuna , Qing Ma , Valluri Rao
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Trop, Pruner & Hu, P.C.
- 主分类号： H03H3/04
- IPC分类号： H03H3/04 ; H03H9/17 ; H03H9/00
摘要：
A material may be removed from the top electrode of a film bulk acoustic resonator to alter the mass loading effect and to adjust the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. Similarly, the piezoelectric layer or the bottom electrode may be selectively milled with a focused ion beam to trim the resonator.
公开/授权文献
- US20040239450A1 Adjusting the frequency of film bulk acoustic resonators 公开/授权日：2004-12-02
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