Invention Grant
- Patent Title: Memory test system for peak power reduction
- Patent Title (中): 用于峰值功率降低的内存测试系统
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Application No.: US10265700Application Date: 2002-10-08
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Publication No.: US06978411B2Publication Date: 2005-12-20
- Inventor: Cheng-I Huang , Chen-Teng Fan , Wang-Jin Chen , Jyh-Herny Wang
- Applicant: Cheng-I Huang , Chen-Teng Fan , Wang-Jin Chen , Jyh-Herny Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Faraday Technology Corp.
- Current Assignee: Faraday Technology Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: G11C29/56
- IPC: G11C29/56 ; G01R31/28

Abstract:
A memory test system for peak power reduction. The memory test system includes a plurality of memories, a plurality of memory built-in self-test circuits and a plurality of delay units. Each of the memory built-in self-test circuits comprises a built-in self-test controller for receiving a clock signal and producing a plurality of required control signals to test one of the memories. Each of the delay units is coupled between two adjacent built-in self-test controllers. The clock signal input to one of the built-in self-test controllers is received by the delay unit to produce a delayed clock signal, and the delay unit outputs the delayed clock signal to the other.
Public/Granted literature
- US20040068684A1 Memory test system for peak power reduction Public/Granted day:2004-04-08
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