发明授权
- 专利标题： Method of forming an isolation layer and method of manufacturing a trench capacitor
- 专利标题（中）： 形成隔离层的方法和制造沟槽电容器的方法
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申请号： US10483423申请日： 2002-06-24
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公开(公告)号： US06984556B2公开(公告)日： 2006-01-10
- 发明人: Christian Drabe , Jana Haensel , Anke Krasemann , Barbara Lorenz , Thomas Morgenstern , Torsten Schneider , Bruno Spuler
- 申请人： Christian Drabe , Jana Haensel , Anke Krasemann , Barbara Lorenz , Thomas Morgenstern , Torsten Schneider , Bruno Spuler
- 申请人地址： DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE
- 代理机构： Edell, Shapiro & Finnan, LLC
- 优先权： EP01117854 20010723
- 国际申请： PCT/EP02/06977 WO 20020624
- 国际公布： WO03/010810 WO 20030206
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A two-step etch process is used to form a vertical collar oxide within the upper portion of a trench capacitor. The first step uses CF4/SiF4/O2 chemistry and ends when the bottom of the collar within the trench is opened although a thin oxide layer still remains on the surface of the PAD-nitride. The second etch step uses C4F8 chemistry to completely remove the remaining silicon oxide layer. The process provides a good uniformity in thickness of the PAD-nitride layer and sufficient collar oxide thickness in the very top section of the collar oxide. The process is applicable for manufacturing deep trench capacitors for DRAM devices.
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