Invention Grant
- Patent Title: Process for producing single crystal of compound semiconductor and crystal growing apparatus
- Patent Title (中): 制备化合物半导体的单晶和晶体生长装置的方法
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Application No.: US10497916Application Date: 2003-10-03
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Publication No.: US06989059B2Publication Date: 2006-01-24
- Inventor: Toshiaki Asahi , Kenji Sato , Takayuki Yabe , Atsutoshi Arakawa
- Applicant: Toshiaki Asahi , Kenji Sato , Takayuki Yabe , Atsutoshi Arakawa
- Applicant Address: JP Tokyo
- Assignee: Nikko Materials Co., Ltd.
- Current Assignee: Nikko Materials Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2002-367188 20021218
- International Application: PCT/JP03/12695 WO 20031003
- International Announcement: WO2004/055249 WO 20040701
- Main IPC: C30B15/02
- IPC: C30B15/02 ; C30B15/12
Abstract:
In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).
Public/Granted literature
- US20050000403A1 Process for producing single crystal of compound semiconductor and crystal growing apparatus Public/Granted day:2005-01-06
Information query
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