公开(公告)号：US08476171B2

公开(公告)日：2013-07-02

申请号：US11988755

申请日：2006-07-18

Applicant: Toshiaki Asahi ,  Kenji Sato ,  Takayuki Shimizu

Inventor： Toshiaki Asahi ,  Kenji Sato ,  Takayuki Shimizu

IPC: H01L21/00

CPC classification number: C30B29/48 ,  C30B33/02 ,  H01L21/477

Abstract: The present invention is to provide a heat treatment method for effectively eliminating Te deposits in a ZnTe single crystal substrate, and a ZnTe single crystal substrate having an optical characteristic suitable for use of a light modulation element and having a thickness of 1 mm or more. A heat treatment method of a ZnTe single crystal substrate, includes: a first step of increasing a temperature the ZnTe single crystal substrate to a first heat treatment temperature T1, and retaining the temperature of the substrate for a predetermined time; and a second step of gradually reducing the temperature of the substrate from the first heat treatment temperature T1 to a second heat treatment temperature T2 lower than the heat treatment temperature T1 with a predetermined rate, wherein the first heat treatment temperature T1 is set in a range of 700° C.≦T1≦1250° C. and the second heat treatment temperature T2 is set in a range of T2≦T1−50.

Abstract translation: 本发明提供一种用于有效地消除ZnTe单晶衬底中的Te沉积物的热处理方法，以及具有适合于使用光调制元件并具有1mm以上厚度的光学特性的ZnTe单晶衬底。 ZnTe单晶衬底的热处理方法包括：将ZnTe单晶衬底的温度提高到第一热处理温度T1并将衬底的温度保持预定时间的第一步骤; 以及以预定的速率逐渐将基板的温度从第一热处理温度T1逐渐降低到低于热处理温度T1的第二热处理温度T2的第二步骤，其中第一热处理温度T1设定在一定范围内 在T1 @ 1250℃下为700℃，第二热处理温度T2设定在T2 @ T1-50的范围内。

公开(公告)号：US07517720B2

公开(公告)日：2009-04-14

申请号：US11984941

申请日：2007-11-26

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: H01L21/00

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

公开(公告)号：US20080090390A1

公开(公告)日：2008-04-17

申请号：US11984944

申请日：2007-11-26

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: H01L21/20

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

Abstract translation: 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。

公开(公告)号：US20080089831A1

公开(公告)日：2008-04-17

申请号：US11984950

申请日：2007-11-26

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: C01B19/00

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

公开(公告)号：US07358159B2

公开(公告)日：2008-04-15

申请号：US10472446

申请日：2002-03-20

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: H01L21/00

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

Abstract translation: 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。

公开(公告)号：US07229494B2

公开(公告)日：2007-06-12

申请号：US10502228

申请日：2002-12-17

Applicant: Toshiaki Asahi ,  Kenji Sato ,  Atsutoshi Arakawa

Inventor： Toshiaki Asahi ,  Kenji Sato ,  Atsutoshi Arakawa

IPC: C30B15/20

CPC classification number: C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/48

Abstract: A method for producing a compound semiconductor single crystal by a liquid encapsulated Czochralski method, including containing a semiconductor raw material and an encapsulating material in a raw material melt-containing portion having a first crucible having a bottom and a cylindrical shape and a second crucible disposed within the first crucible and having a communication hole communicating with the first crucible in a bottom portion thereof; melting the raw material by heating the raw material melt-containing portion; and growing a crystal by making a seed crystal contact with a surface of the raw material melt in a state covered with the encapsulating material and by pulling up the seed crystal. A heater temperature is controlled so that a diameter of a growing crystal becomes approximately equal to an inner diameter of the second crucible, and the crystal is grown by maintaining a surface of the growing crystal in a state covered with the encapsulating material until termination of crystal growth.

Abstract translation: 一种通过液体封装的Czochralski法制备化合物半导体单晶的方法，包括在具有底部和圆筒形状的第一坩埚的原料熔融物部分中包含半导体原料和封装材料，以及设置第二坩埚 在第一坩埚内并且在其底部具有与第一坩埚连通的连通孔; 通过加热原料熔融物部分来熔化原料; 并且通过在被封装材料覆盖的状态下使晶种与原料熔融物的表面接触并且拉起晶种来生长晶体。 控制加热器温度使得生长的晶体的直径变得近似等于第二坩埚的内径，并且通过将生长晶体的表面保持在被封装材料覆盖的状态直到晶体结束来生长晶体 成长。

公开(公告)号：US06989059B2

公开(公告)日：2006-01-24

申请号：US10497916

申请日：2003-10-03

Applicant: Toshiaki Asahi ,  Kenji Sato ,  Takayuki Yabe ,  Atsutoshi Arakawa

Inventor： Toshiaki Asahi ,  Kenji Sato ,  Takayuki Yabe ,  Atsutoshi Arakawa

IPC: C30B15/02 ,  C30B15/12

CPC classification number: C30B27/02 ,  C30B15/12 ,  C30B29/48 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

Abstract: In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).

Abstract translation: 在使用具有双坩埚结构的晶体生长装置的LEC方法制造化合物半导体单晶的制造方法中，通过用具有贯通槽的板状构件覆盖第二坩埚而使晶体长大， 能够将具有尖端的晶种保持部的晶体提升轴引入到第二坩埚中，形成第二坩埚内的气氛几乎不变化（半密封结构）的状态。

公开(公告)号：US5871580A

公开(公告)日：1999-02-16

申请号：US669493

申请日：1996-07-11

Applicant: Toshiaki Asahi ,  Osamu Oda ,  Kenji Sato

Inventor： Toshiaki Asahi ,  Osamu Oda ,  Kenji Sato

IPC: C30B11/00 ,  C30B11/14 ,  C30B15/00 ,  C30B15/36 ,  C30B28/04

CPC classification number: C30B15/36 ,  C30B11/00 ,  C30B11/14 ,  C30B15/00 ,  C30B29/48

Abstract: Using a thin plate seed crystal 10 having a different material from a bulk crystal to be grown and having a great diameter, before crystal growth is started, a temperature in the lower portion of a solution 12s in which material is solved into a solvent (or a melt 12m) is set to a higher temperature than the upper portion to cause convection so that the surface of seed crystal 10 is rinsed by the convection by keeping in the state for a predetermined period. Then, the crystal growth is started by the Bridgman method or gradient freezing method. In this case, a temperature gradient may be provided on the surface of seed crystal 10 by inclining the seed crystal 10 such that nucleation of crystal growth is generated at a position whose temperature is lowest on the surface of seed crystal 10 upon the start of crystal growth, or a small concave or protrusion portion may be formed in advance on the surface of seed crystal 10 such that nucleation of crystal growth is generated at the small concave or protrusion portion. Thereby, a bulk single crystal of good quality can be manufactured with a high yield.

Abstract translation: PCT No.PCT / JP95 / 02025 Sec。 371日期：1996年7月11日 102（e）日期1996年7月11日PCT提交1995年4月10日PCT公布。 第WO96 / 15297号公报 日期：1996年5月23日使用具有不同材质的薄板晶种10，待生长并具有大直径的晶体生长开始之前，溶液12s的下部的温度被溶解成 将溶剂（或熔体12m）设定为比上部更高的温度以引起对流，使得晶种10的表面通过保持在预定时间段内的对流而被冲洗。 然后，通过Bridgman方法或梯度冷冻法开始晶体生长。 在这种情况下，可以通过倾斜晶种10在晶种10的表面上提供温度梯度，使得在晶体开始时晶种10的表面的温度最低的位置处产生晶体生长成核 可以预先在晶种10的表面上形成生长或小的凹部或突出部，使得在小的凹部或突出部产生晶体生长的成核。 因此，可以高产率制造质量好的本体单晶。

公开(公告)号：US20110236297A1

公开(公告)日：2011-09-29

申请号：US13158618

申请日：2011-06-13

Applicant: Toshiaki Asahi ,  Kenji Sato ,  Takayuki Shimizu

Inventor： Toshiaki Asahi ,  Kenji Sato ,  Takayuki Shimizu

IPC: C01B19/04

CPC classification number: C30B29/48 ,  C30B33/02 ,  H01L21/477

Abstract: The present invention is to provide a heat treatment method for effectively eliminating Te deposits in a ZnTe single crystal substrate, and a ZnTe single crystal substrate having an optical characteristic suitable for use of a light modulation element and having a thickness of 1 mm or more. A heat treatment method of a ZnTe single crystal substrate, includes: a first step of increasing a temperature the ZnTe single crystal substrate to a first heat treatment temperature T1, and retaining the temperature of the substrate for a predetermined time; and a second step of gradually reducing the temperature of the substrate from the first heat treatment temperature T1 to a second heat treatment temperature T2 lower than the heat treatment temperature T1 with a predetermined rate, wherein the first heat treatment temperature T1 is set in a range of 700° C.≦T1≦1250° C. and the second heat treatment temperature T2 is set in a range of T2≦T1−50.

Abstract translation: 本发明提供一种用于有效地消除ZnTe单晶衬底中的Te沉积物的热处理方法，以及具有适合于使用光调制元件并具有1mm以上厚度的光学特性的ZnTe单晶衬底。 ZnTe单晶衬底的热处理方法包括：将ZnTe单晶衬底的温度提高到第一热处理温度T1并将衬底的温度保持预定时间的第一步骤; 以及以预定的速率逐渐将基板的温度从第一热处理温度T1逐渐降低到低于热处理温度T1的第二热处理温度T2的第二步骤，其中第一热处理温度T1设定在一定范围内 的温度为700℃，N 2; T1＆nlE; 1250℃，第二热处理温度T2设定在T2＆lt; 1N; T1-50的范围内。

公开(公告)号：US07696073B2

公开(公告)日：2010-04-13

申请号：US11984943

申请日：2007-11-26

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: H01L21/38 ,  H01L29/22 ,  H01L31/0296

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

Abstract translation: 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比更小的掺杂量的所需载流子浓度，并且可以提高所得晶体的结晶度。