- Patent Title: Stacked gate flash memory device and method of fabricating the same
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Application No.: US10733626Application Date: 2003-12-11
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Publication No.: US06998313B2Publication Date: 2006-02-14
- Inventor: Chi-Hui Lin
- Applicant: Chi-Hui Lin
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Agency: Quintero Law Office
- Priority: TW91136415A 20021217
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device is disposed in a cell trench within a substrate to achieve higher integration of memory cells.
Public/Granted literature
- US20040121540A1 Stacked gate flash memory device and method of fabricating the same Public/Granted day:2004-06-24
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