发明授权
- 专利标题： Total internal reflection (TIR) CMOS imager
- 专利标题（中）： 全内反射（TIR）CMOS成像仪
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申请号： US10373785申请日： 2003-02-27
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公开(公告)号： US07001795B2公开(公告)日： 2006-02-21
- 发明人: Tongbi Jiang , Michael Connell , Jin Li
- 申请人： Tongbi Jiang , Michael Connell , Jin Li
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dickstein Shapiro Morin & Oshinsky LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L31/0232
摘要：
The subject invention is directed to use of photoconductors as conductors of light to photo diodes in a CMOS chip, wherein said photoconductors are separated by at least one low refractive index material (i.e. air). The present invention offers advantages over previous CMOS imaging technology, including enhanced light transmission to photo diodes. The instant methods for producing a CMOS imaging device and CMOS imager system involve minimal power loss. Since no lens is required, the invention eliminates concerns about radius limitation and about damaging lenses during die attach, backgrind, and mount. The invention also provides little or no cross talk between photo diodes.
公开/授权文献
- US20050274993A1 TOTAL INTERNAL REFLECTION (TIR) CMOS IMAGER 公开/授权日：2005-12-15
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