发明授权
- 专利标题： Method and system for single ion implantation
- 专利标题（中）： 单离子注入的方法和系统
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申请号： US10484647申请日： 2002-08-27
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公开(公告)号： US07002166B2公开(公告)日： 2006-02-21
- 发明人: David Norman Jamieson , Steven Prawer , Andrew Steven Dzurak , Robert Graham Clark , Changyi Yang
- 申请人： David Norman Jamieson , Steven Prawer , Andrew Steven Dzurak , Robert Graham Clark , Changyi Yang
- 申请人地址： AU Sydney
- 专利权人： Qucor Pty Ltd
- 当前专利权人： Qucor Pty Ltd
- 当前专利权人地址： AU Sydney
- 代理机构： Wood, Phillips, Katz, Clark & Mortimer
- 优先权： AUPR7289 20010827
- 国际申请： PCT/AU02/01150 WO 20020827
- 国际公布： WO03/019635 WO 20030306
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L31/115 ; H01J37/304 ; G06N1/00 ; G01T1/00
摘要：
This invention concerns a method and system for single ion doping and machining by detecting the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of 31P ions into a semi-conductor substrate for construction of a Kane quantum computer. The invention particularly concerns the application of a potential across two electrodes on the surface of the substrate to create a field to separate and sweep out electron-hole pairs formed within the substrate. A detector is then used to detecting transient current in the electrodes, and so determine the arrival of a single ion in the substrate.
公开/授权文献
- US20040232353A1 Method and system for single ion implanation 公开/授权日：2004-11-25
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