Invention Grant
US07002183B2 Semiconductor light emitting device having a semiconductor layer formed by selective growth
失效
具有通过选择性生长形成的半导体层的半导体发光器件
- Patent Title: Semiconductor light emitting device having a semiconductor layer formed by selective growth
- Patent Title (中): 具有通过选择性生长形成的半导体层的半导体发光器件
-
Application No.: US11077452Application Date: 2005-03-09
-
Publication No.: US07002183B2Publication Date: 2006-02-21
- Inventor: Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
- Applicant: Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Bell, Boyd & Lloyd LLC
- Priority: JPP2001-061837 20010306
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.
Public/Granted literature
- US20050161661A1 Semiconductor light emitting device Public/Granted day:2005-07-28
Information query
IPC分类:
