公开(公告)号：US08741451B2

公开(公告)日：2014-06-03

申请号：US11976246

申请日：2007-10-23

Applicant: Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

Inventor： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC: B32B9/00 ,  B32B19/00

CPC classification number: H01L21/02538 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265

Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

Abstract translation: 使用具有位错的晶体基底来获得位错密度低的晶体膜，晶体基板和半导体器件。 生长衬底（11）的一侧设置有在其间具有缓冲层（12）的晶体层（13）。 在从下方延伸的每个穿透位错D1的端部中，晶体层（13）具有空间（13a），（13b）。 穿透位错D1通过空间（13a），（13b）与上层分开，使得每个穿透位错D1被阻止传播到上层。 当由汉堡矢量表示的穿透位错D1的位移被保留以产生另一个位错时，空间（13a），（13b）改变其位移的方向。 结果，空间（13a），（13b）上方的上层以低位错密度变成结晶。

公开(公告)号：US20070125996A1

公开(公告)日：2007-06-07

申请号：US11699999

申请日：2007-01-31

Applicant: Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

Inventor： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC: H01L29/06 ,  H01L33/00 ,  H01L31/00 ,  H01L29/739

CPC classification number: H01L21/02538 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265

Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

Abstract translation: 使用具有位错的晶体基底来获得位错密度低的晶体膜，晶体基板和半导体器件。 生长衬底（11）的一侧设置有在其间具有缓冲层（12）的晶体层（13）。 晶体层（13）在从下方延伸的每个穿透位错D 1 1的末端具有间隔（13a），（13b）。 穿透位错D 1＆lt; 1＆gt;通过空间（13a），（13b）从上层分离，使得每个穿透位错D 1 1被阻止传播到 上层。 当由汉堡矢量表示的穿透位错D 1 1的位移被保留以产生另一位错时，空间（13a），（13b）改变其位移的方向。 结果，空间（13a），（13b）上方的上层以低位错密度变为结晶。

公开(公告)号：US20070122573A1

公开(公告)日：2007-05-31

申请号：US11608628

申请日：2006-12-08

Applicant: Tetsurou Yasuike ,  Masato Doi

Inventor： Tetsurou Yasuike ,  Masato Doi

IPC: E06B3/00

CPC classification number: B65D33/2541 ,  B65D81/268

Abstract: The atmosphere improving tape 10 for a package comprising a rectangular atmosphere improving layer 10A in the inner side and a thermoplastic resin layer 10B surrounding the atmosphere improving layer in the outer side. The atmosphere improving layer 10A contains an atmosphere improving material such as an deoxidizing agent. With the present invention, miss use and injection miss of an atmosphere improving material never occur, and a packaging material can freely be selected with no load to the environment. The tape is excellent in the formability, and the atmosphere improving capability can easily be given to the tape.

Abstract translation: 用于包括内侧的矩形气氛改进层10A和包围外侧的气氛改进层的热塑性树脂层10B的包装的气氛改进带10。 气氛改善层10A含有脱气剂等气氛改善材料。 通过本发明，不会发生气氛改善材料的缺失使用和注入缺失，并且可以在无负载的情况下自由选择包装材料到环境中。 胶带的成形性优异，并且可以容易地对胶带赋予气氛提高能力。

公开(公告)号：US07221001B2

公开(公告)日：2007-05-22

申请号：US11066699

申请日：2005-02-24

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L33/00

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract translation: 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

公开(公告)号：US20070087644A1

公开(公告)日：2007-04-19

申请号：US11558620

申请日：2006-11-10

Applicant: Toshiaki Iwafuchi ,  Toyoharu Oohata ,  Masato Doi

Inventor： Toshiaki Iwafuchi ,  Toyoharu Oohata ,  Masato Doi

IPC: H01J9/00

CPC classification number: H01L33/24 ,  G02F2001/13613 ,  H01L21/2007 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/16 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L25/0753 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73267 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3512 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

Abstract translation: 一种制造图像显示单元的方法，其中图像显示单元包括用于显示图像的多个发光装置的阵列，并且其中制造图像显示单元的方法采用例如空间扩展传送，由此 第一转移步骤包括将排列在第一衬底上的器件转移到临时保持构件，使得器件彼此间隔开，间距大于排列在第一衬底上的器件的间距，间距保持步骤包括： 临时保持构件上的装置和第三转移步骤包括将保持在临时保持构件上的装置转移到第二板上，使得装置彼此间隔开，间距大于保持在临时保持构件上的装置的间距 会员。

公开(公告)号：US20070085087A1

公开(公告)日：2007-04-19

申请号：US11558176

申请日：2006-11-09

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L33/00

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes: a substrate having a substrate surface oriented along a substrate surface plane; a first grown layer including a first grown layer conductivity type formed on the substrate; a masking layer formed on the first grown layer; a second grown layer of a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane; a first cladding layer including a first cladding layer conductivity type formed along at least a portion of the crystal surface plane; an active layer; and a second cladding layer including a second cladding layer conductivity type. At least one of the first cladding layer, the active layer, and the second cladding layer cover the masking layer surrounding the opening.

Abstract translation: 提供了一种半导体发光器件。 半导体发光器件包括：具有沿衬底表面取向的衬底表面的衬底; 在基板上形成包括第一生长层导电型的第一生长层; 形成在第一生长层上的掩模层; 通过通过掩模层中的开口的选择性生长形成并包括沿着晶体表面取向的晶体表面形成的第二生长层导电类型的第二生长层; 包括沿着所述晶体表面的至少一部分形成的第一包层导电类型的第一包层; 活性层 以及包括第二包覆层导电型的第二包覆层。 第一包覆层，有源层和第二覆层中的至少一个覆盖围绕开口的掩模层。

公开(公告)号：US07129514B2

公开(公告)日：2006-10-31

申请号：US11097732

申请日：2005-03-31

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L29/20 ,  H01L31/036

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US07122394B2

公开(公告)日：2006-10-17

申请号：US11093807

申请日：2005-03-30

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L29/20 ,  H01L31/036

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Abstract translation: 提供半导体发光器件。 半导体发光器件包括衬底和选择性地生长在其上的晶体层，其中晶体层的至少一部分沿着与衬底相关的取向主平面倾斜或对角地相交的平面定向，从而例如增强晶体 性能，防止穿透位错，并且在制造和使用期间促进装置小型化和分离。

公开(公告)号：US07098768B2

公开(公告)日：2006-08-29

申请号：US10496953

申请日：2002-11-28

Applicant: Masato Doi

Inventor： Masato Doi

IPC: H01C1/012

CPC classification number: H01C17/006 ,  H01C1/14 ,  H01C7/003 ,  H01C17/28 ,  H01C17/281 ,  H01C17/283

Abstract: A chip resistor includes: an insulating chip substrate 11 having an upper surface formed with a resistive film 12 and a pair of left and right upper electrodes 13 at two ends thereof; a cover coat 14 covering the resistive film; auxiliary upper electrodes 15 formed on upper surfaces of the upper electrodes 13 to overlap the cover coat 14; a left and a right side electrodes 16 formed on a left and a right end surfaces 11a of the insulating substrate 11; and metal plate layers formed on surfaces of the auxiliary upper electrodes and side electrodes. The cover coat 14 is formed with an uppermost over coat 19 covering a region where the auxiliary upper electrodes 15 overlap the cover coat 14, whereby the upper electrodes 13 and the auxiliary upper electrodes 15 are protected from migration caused by sulfur gases.

Abstract translation: 芯片电阻器包括：绝缘芯片基板11，其上表面形成有电阻膜12和在其两端的一对左右上电极13; 覆盖电阻膜的覆盖层14; 形成在上电极13的上表面上的辅助上电极15与覆盖层14重叠; 形成在绝缘基板11的左右端面11a上的左右电极16; 以及形成在辅助上电极和侧电极的表面上的金属板层。 覆盖层14形成有覆盖辅助上部电极15与覆盖层14重叠的区域的最上层涂层19，由此上部电极13和辅助上部电极15被保护以免由硫气引起的迁移。

公开(公告)号：US07087934B2

公开(公告)日：2006-08-08

申请号：US10192232

申请日：2002-07-10

Applicant: Toyoharu Oohata ,  Masato Doi

Inventor： Toyoharu Oohata ,  Masato Doi

IPC: H01L29/22 ,  H01L33/00 ,  H01L21/00

CPC classification number: H01L33/22 ,  H01L33/24

Abstract: A semiconductor light emitting device includes a crystal growth layer, and a crystal layer composed of a first conductive type layer, an active layer, and a second conductive type layer. The crystal layer is provided on the upper side of the crystal growth layer. In this device, a back plane of the crystal growth layer has irregularities. Since light generated in the device is prevented from being totally reflected from the back plane of the crystal growth layer, the light emergence efficiency of the device can be increased.