公开(公告)号：US07888690B2

公开(公告)日：2011-02-15

申请号：US12034415

申请日：2008-02-20

Applicant: Toshiaki Iwafuchi ,  Toyoharu Oohata ,  Masato Doi

Inventor： Toshiaki Iwafuchi ,  Toyoharu Oohata ,  Masato Doi

IPC: H01L33/00

CPC classification number: H01L33/24 ,  G02F2001/13613 ,  H01L21/2007 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/16 ,  H01L24/24 ,  H01L24/81 ,  H01L24/82 ,  H01L25/0753 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73267 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3512 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/05599

Abstract: An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, for example, a space expanding transfer, whereby a first transfer step includes transferring the devices arrayed on a first substrate to a temporary holding member such that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, a second holding step includes holding the devices on the temporary holding member, and a third transfer step includes transferring the devices held on the temporary holding member onto a second board such that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporary holding member.

Abstract translation: 一种图像显示单元和图像显示单元的制造方法，其中，所述图像显示单元包括用于显示图像的多个发光装置的阵列，并且其中，所述图像显示单元的制造方法采用例如 空间膨胀转移，其中第一转移步骤包括将排列在第一衬底上的器件转移到临时保持构件，使得器件彼此间隔开，间距大于排列在第一衬底上的器件的间距， 保持步骤包括将设备保持在临时保持构件上，第三传送步骤包括将保持在临时保持构件上的设备转移到第二板上，使得设备彼此间隔开，间距大于设备的间距 举行临时控股成员。

公开(公告)号：US20080050599A1

公开(公告)日：2008-02-28

申请号：US11976246

申请日：2007-10-23

Applicant: Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

Inventor： Etsuo Morita ,  Yousuke Murakami ,  Goshi Biwa ,  Hiroyuki Okuyama ,  Masato Doi ,  Toyoharu Oohata

IPC: B32B9/04

CPC classification number: H01L21/02538 ,  C30B25/02 ,  C30B25/183 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265

Abstract: A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.

公开(公告)号：US07297985B2

公开(公告)日：2007-11-20

申请号：US10147654

申请日：2002-05-15

Applicant: Toyoharu Oohata ,  Hideharu Nakajima ,  Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

Inventor： Toyoharu Oohata ,  Hideharu Nakajima ,  Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

IPC: H01L29/22

CPC classification number: H01L25/0753 ,  H01L27/156 ,  H01L33/24 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.

Abstract translation: 通过将绝缘材料中的至少一部分发光器件埋入而形成显示器件，其中形成用于发光器件的驱动电极以在绝缘材料的表面上被抽出。 通过在基体上二维排列这样的发光装置来制造显示单元。 由于显示装置通过将绝缘材料中精细地形成的发光装置埋入模块化，将发光装置重新形成为易于处理的尺寸，因此可以使用这种显示装置来抑制显示装置的制造成本 并且确保发光装置的期望的处理性能; 例如，便于携带发光器件或将其安装在基体上。

公开(公告)号：US07250320B2

公开(公告)日：2007-07-31

申请号：US10512131

申请日：2004-02-19

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC: H01L29/22

CPC classification number: H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

Abstract: A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided.An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

Abstract translation: 提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底由不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US07129107B2

公开(公告)日：2006-10-31

申请号：US11096381

申请日：2005-03-31

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L29/20 ,  H01L31/036

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US07087932B2

公开(公告)日：2006-08-08

申请号：US10088463

申请日：2001-07-18

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

IPC: H01L29/04

CPC classification number: H01L33/24 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/08

Abstract: A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same active layer, thereby forming an element or device in high precision without complicating a fabrication process.

Abstract translation: 提供具有不使制造工艺复杂化的结构的半导体发光元件，可以高精度地形成，并且不会引起结晶性的劣化。 形成发光元件，其包括通过选择性地生长纤锌矿型化合物半导体，第一导电类型的包覆层，有源层和第二导电类型的覆盖层而形成的选择性晶体生长层，其中 形成在选择性晶体生长层上，其中形成有源层使得有源层平行于不同的晶面延伸，活性层的尺寸大于混晶的构成原子的扩散长度，或活性层的活性层 层的组成和厚度中的至少一个具有差异，由此形成具有多个发光波长彼此不同的发光波长区域的有源层。 元件被布置成使得电流或电流可以充电到多个发光波长区域中。 由于基于选择性增长的结构，带隙能量在相同的有源层内变化，从而以高精度形成元件或器件而不会使制造过程复杂化。

公开(公告)号：US07002183B2

公开(公告)日：2006-02-21

申请号：US11077452

申请日：2005-03-09

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata

IPC: H01L33/00

CPC classification number: H01L33/24 ,  H01J63/04 ,  H01J63/06 ,  H01S5/227 ,  H01S5/2272 ,  H01S5/32341

Abstract: Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

Abstract translation: 提供半导体发光器件。 半导体发光器件包括基体，具有条形开口部分的选择掩模，形成在基体上的选择掩模，通过从开口部分选择性地生长形成的半导体层， 大致平行于开口部分的长边的脊线，以及形成在半导体层上的第一导电型包覆层，有源层和第二导电型包覆层。

公开(公告)号：US06984927B2

公开(公告)日：2006-01-10

申请号：US11066750

申请日：2005-02-25

Applicant: Katsuhiro Tomoda ,  Toyoharu Oohata

Inventor： Katsuhiro Tomoda ,  Toyoharu Oohata

IPC: H01J1/02

CPC classification number: H01L24/82 ,  G09F9/33 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/58 ,  H01L33/60 ,  H01L2221/68368 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/3025 ,  H01L2924/00

Abstract: A display unit includes light emitting devices arrayed in such a manner as to be spaced from each other, and a sealing material for covering the surfaces of the light emitting devices, wherein the sealing material has a light diffusion function. The light diffusion function is given to the sealing material by providing a reflection mirror and a half mirror in the sealing material, dispersing, in the sealing material, fine particles having a refractive index different from that of the sealing material, or dispersing bubbles in the sealing material. Since the light diffusion function is given to the sealing material, the light emission region of each of the light emitting devices is substantially enlarged to a size nearly equal to an array pitch of the light emitting devices, to thereby obtain an image display excellent in viewability.

公开(公告)号：US06972204B2

公开(公告)日：2005-12-06

申请号：US10236153

申请日：2002-09-06

Applicant: Toyoharu Oohata ,  Toshiaki Iwafuchi ,  Hisashi Ohba

Inventor： Toyoharu Oohata ,  Toshiaki Iwafuchi ,  Hisashi Ohba

IPC: G09F9/33 ,  G09F9/35 ,  H01J9/02 ,  H01L21/20 ,  H01L21/44 ,  H01L21/46 ,  H01L21/52 ,  H01L21/60 ,  H01L21/82 ,  H01L33/32 ,  H01L33/40 ,  H01L33/48

CPC classification number: H01L24/82 ,  G09F9/33 ,  G09F9/35 ,  H01J9/02 ,  H01J2217/49 ,  H01L21/568 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82005 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/3025 ,  H01L2924/00

Abstract: A first adhesive layer is provided on a base substrate, and multiple devices are arranged on the first adhesive layer. The first adhesive layer is irradiated with laser light from the back side of the base substrate, only at positions corresponding to the devices to be transferred, by use of a mask, whereby the adhesive force of the first adhesive layer is lowered only at these positions, and only these devices are made releasable from the base substrate. A transfer substrate provided with a second adhesive layer and the base substrate are so disposed that the devices and the second adhesive layer are opposite to each other and pressed against each other. When the transfer substrate is stripped from the base substrate, only the devices to be transferred are selectively transferred onto the transfer substrate.

公开(公告)号：US06969624B2

公开(公告)日：2005-11-29

申请号：US11059865

申请日：2005-02-17

Applicant: Toshiaki Iwafuchi ,  Yoshiyuki Yanagisawa ,  Toyoharu Oohata

Inventor： Toshiaki Iwafuchi ,  Yoshiyuki Yanagisawa ,  Toyoharu Oohata

IPC: H01L21/00 ,  H01L21/683 ,  H01L21/762 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/20 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10T225/10 ,  H01L2924/00

Abstract: The interface between a first substrate and light-emitting diodes formed on the first substrate is selectively irradiated with an energy beam and transmits the energy beam through the first substrate, thereby selectively releasing the light-emitting diodes. The light-emitting diodes are then transferred onto a device holding layer included on a device holding substrate. Subsequently, the light-emitting diodes are transferred onto a second substrate. The irradiation of the interface with the energy beam enables the devices to be easily released from the first substrate.

Abstract translation: 在第一衬底和形成在第一衬底上的发光二极管之间的界面被能量束选择性地照射，并且将能量束透过第一衬底，从而选择性地释放发光二极管。 然后将发光二极管转移到包含在器件保持衬底上的器件保持层上。 随后，将发光二极管转移到第二基板上。 与能量束的界面的照射使得能够容易地从第一基板释放装置。