发明授权
- 专利标题： Lateral super-junction semiconductor device
- 专利标题（中）： 横向超结半导体器件
-
申请号： US10848684申请日： 2004-05-19
-
公开(公告)号： US07002211B2公开(公告)日： 2006-02-21
- 发明人: Yasuhiko Onishi , Tatsuhiko Fujihira , Susumu Iwamoto , Takahiro Sato
- 申请人： Yasuhiko Onishi , Tatsuhiko Fujihira , Susumu Iwamoto , Takahiro Sato
- 申请人地址： JP
- 专利权人： Fuji Electric Co., Ltd.
- 当前专利权人： Fuji Electric Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Rossi, Kimms & McDowell, LLP
- 优先权： JP2000-127021 20000427
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A lateral semiconductor device includes an alternating conductivity type layer for providing a first semiconductor current path in the ON-state of the device and for being depleted in the OFF-state of the device, that has an improved structure for realizing a high breakdown voltage in the curved sections of the alternating conductivity type layer.
公开/授权文献
- US20040212032A1 Lateral super-junction semiconductor device 公开/授权日：2004-10-28
信息查询
IPC分类:
