Invention Grant
US07008886B2 Process for treatment of the surface of a semiconducting material, particularly using hydrogen, and surface obtained using this process
失效
用于处理半导体材料的表面，特别是使用氢的方法和使用该方法获得的表面的方法
- Patent Title: Process for treatment of the surface of a semiconducting material, particularly using hydrogen, and surface obtained using this process
- Patent Title (中): 用于处理半导体材料的表面，特别是使用氢的方法和使用该方法获得的表面的方法
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Application No.: US10473279Application Date: 2002-04-17
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Publication No.: US07008886B2Publication Date: 2006-03-07
- Inventor: Vincent Derycke , Patrick Soukiassan
- Applicant: Vincent Derycke , Patrick Soukiassan
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Thelen Reid & Priest LLP
- Priority: FR0105317 20010419
- International Application: PCT/FR02/01323 WO 20020417
- International Announcement: WO02/086202 WO 20021031
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A process treats a surface of a semiconductor material in order to put the surface into a predetermined electrical state. The semiconductor material is preferably monocrystalline. The process includes (a) preparing the surface of the semiconductor material such that the surface has a controlled organization at an atomic scale such that the surface is capable of combining with a chosen material, and (b) combining the surface thus prepared with a material chosen from among hydrogen, molecules containing hydrogen, metals, organic molecules and inorganic molecules, wherein the preparing and the combining the surface with the material cooperate to obtain the predetermined electrical state of the surface.
Public/Granted literature
- US20040104406A1 Method for treating the surface of a semiconductor material Public/Granted day:2004-06-03
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