发明授权
US07009264B1 Selective spacer to prevent metal oxide formation during polycide reoxidation
失效
选择性间隔物，以防止在多偶氮化物再氧化过程中形成金属氧化物
- 专利标题： Selective spacer to prevent metal oxide formation during polycide reoxidation
- 专利标题（中）： 选择性间隔物，以防止在多偶氮化物再氧化过程中形成金属氧化物
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申请号： US08902809申请日： 1997-07-30
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公开(公告)号： US07009264B1公开(公告)日： 2006-03-07
- 发明人: Klaus Florian Schuegraf , Scott Jeffrey DeBoer , Randhir P. S. Thakur
- 申请人： Klaus Florian Schuegraf , Scott Jeffrey DeBoer , Randhir P. S. Thakur
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman, Lundberg, Woessner & Kluth, P.A.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A selective spacer to prevent metal oxide formation during polycide reoxidation of a feature such as an electrode and a method for forming the selective spacer are disclosed. A material such as a thin silicon nitride or an amorphous silicon film is selectively deposited on the electrode by limiting deposition time to a period less than an incubation time for the material on silicon dioxide near the electrode. The spacer is deposited only on the electrode and not on surrounding silicon dioxide. The spacer serves as a barrier for the electrode during subsequent oxidation to prevent metal oxide formation while allowing oxidation to take place over the silicon dioxide.