发明授权
- 专利标题: Method of manufacturing an integrated circuit device including forming an oxidation resistant film over an isolation region and subsequently forming a gate insulating film of a misfet
- 专利标题(中): 一种集成电路器件的制造方法,包括在隔离区域上形成抗氧化膜,随后形成漏失的栅极绝缘膜
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申请号: US10736794申请日: 2003-12-17
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公开(公告)号: US07011999B2公开(公告)日: 2006-03-14
- 发明人: Shinichi Minami , Fukuo Oowada , Xiaudong Fang
- 申请人: Shinichi Minami , Fukuo Oowada , Xiaudong Fang
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout and Kraus, LLP.
- 优先权: JP2002-368666 20021219
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/8249 ; H01L21/8234 ; H01L21/8242 ; H01L21/20
摘要:
A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.