公开(公告)号：US20050269663A1

公开(公告)日：2005-12-08

申请号：US11203272

申请日：2005-08-15

申请人： Shinichi Minami ,  Fukuo Oowada ,  Xiaudong Fang

发明人： Shinichi Minami ,  Fukuo Oowada ,  Xiaudong Fang

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/06 ,  H01L27/092 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L23/62

CPC分类号： H01L27/11568 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/11573 ,  H01L28/20 ,  H01L28/40

摘要： A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.

摘要翻译： 一种具有电容器元件的半导体集成电路器件，包括设置在半导体衬底的主表面的元件隔离区域上的下电极和设置在下电极上的电介质膜之间的上电极，设置有抗氧化膜 在半导体衬底的主表面的元件隔离区域和下电极之间以及下电极和上电极之间。

公开(公告)号：US07011999B2

公开(公告)日：2006-03-14

申请号：US10736794

申请日：2003-12-17

申请人： Shinichi Minami ,  Fukuo Oowada ,  Xiaudong Fang

发明人： Shinichi Minami ,  Fukuo Oowada ,  Xiaudong Fang

IPC分类号： H01L21/8238 ,  H01L21/8249 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/20

CPC分类号： H01L27/11568 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/11573 ,  H01L28/20 ,  H01L28/40

摘要： A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.

摘要翻译： 一种具有电容器元件的半导体集成电路器件，包括设置在半导体衬底的主表面的元件隔离区域上的下电极和设置在下电极上的电介质膜之间的上电极，设置有抗氧化膜 在半导体衬底的主表面的元件隔离区域和下电极之间以及下电极和上电极之间。

公开(公告)号：US07611942B2

公开(公告)日：2009-11-03

申请号：US11203272

申请日：2005-08-15

申请人： Shinichi Minami ,  Fukuo Oowada ,  Xiaudong Fang

发明人： Shinichi Minami ,  Fukuo Oowada ,  Xiaudong Fang

IPC分类号： H01L21/8238

CPC分类号： H01L27/11568 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/11573 ,  H01L28/20 ,  H01L28/40

摘要： A semiconductor integrated circuit device having a capacitor element, including a lower electrode provided over an element isolation region of a principal surface of a semiconductor substrate, and an upper electrode provided over the lower electrode with a dielectric film interposed therebetween, has oxidation resistant films disposed between the element isolation region of the principal surface of the semiconductor substrate and the lower electrode, and between the lower electrode and the upper electrode.

摘要翻译： 一种具有电容器元件的半导体集成电路器件，包括设置在半导体衬底的主表面的元件隔离区域上的下电极和设置在下电极上的电介质膜之间的上电极，设置有抗氧化膜 在半导体衬底的主表面的元件隔离区域和下电极之间以及下电极和上电极之间。