Invention Grant
- Patent Title: Method of manufacturing a semiconductor device including defect inspection using a semiconductor testing probe
- Patent Title (中): 使用半导体测试探针制造包括缺陷检查的半导体器件的方法
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Application No.: US10459598Application Date: 2003-06-12
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Publication No.: US07018857B2Publication Date: 2006-03-28
- Inventor: Masatoshi Kanamaru , Takanori Aono , Tatsuya Nagata , Kenji Kawakami , Hideyuki Aoki
- Applicant: Masatoshi Kanamaru , Takanori Aono , Tatsuya Nagata , Kenji Kawakami , Hideyuki Aoki
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout and Kraus, LLP.
- Priority: JP2002-170774 20030612
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
A manufacturing method for improving the yield in a semiconductor manufacturing process and reducing the manufacturing cost produces a semiconductor device that is inexpensively manufactured and has a high reliability by reliably making contact during inspection with a suitable pressing force, while limiting damage to an electrode pad even when many inspected electrodes are inspected. A substrate used for inspection of the semiconductor device has a beam, a probe on the beam having a projecting shape for coming in contact with an electrode (electrode pad) of the semiconductor device, and a secondary electrode electrically connected to the probe through an electrically conductive member disposed on the side of the beam opposed to the side where the probe is provided. In an inspecting process, an inspecting device having a layer having many projections formed in the probe come in contact with the electrode pad of the semiconductor device.
Public/Granted literature
- US20050074910A1 Manufacturing method of semiconductor device Public/Granted day:2005-04-07
Information query
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