- 专利标题: Semiconductor memory device
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申请号: US10815709申请日: 2004-04-02
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公开(公告)号: US07031199B2公开(公告)日: 2006-04-18
- 发明人: Naoki Kuroda , Masashi Agata
- 申请人: Naoki Kuroda , Masashi Agata
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2001-269872 20010906
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A port A of the path including a first transistor of a memory cell to be accessed, a first bit line pair, a first column selection switch and a data line pair interleaves with a port B of the path including a second transistor of the memory cell to be accessed, a second bit line pair, a second column selection switch and the data line pair in two cycles of a clock. A read amplifier amplifies data transferred from a bit line pair to the data line pair and outputs the resultant data to an input/output buffer in one cycle of the clock. The input/output buffer outputs the data received from the read amplifier to the outside in one cycle of the clock.
公开/授权文献
- US20040184322A1 Semiconductor memory device 公开/授权日:2004-09-23
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