发明授权
- 专利标题： Integrated circuits with rhodium-rich structures
- 专利标题（中）： 具有富含铑结构的集成电路
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申请号： US10850664申请日： 2004-05-21
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公开(公告)号： US07038263B2公开(公告)日： 2006-05-02
- 发明人: Haining Yang , Dan Gealy , Gurtej S. Sandhu , Howard Rhodes , Mark Visokay
- 申请人： Haining Yang , Dan Gealy , Gurtej S. Sandhu , Howard Rhodes , Mark Visokay
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Knobbe, Martens, Olson & Bear, LLP
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
摘要：
A structure and method are disclosed for forming a capacitor for an integrated circuit. The capacitor includes a rhodium-rich structure, a rhodium oxide layer in direct contact with the rhodium-rich structure, a capacitor dielectric in direct contact with the rhodium oxide layer and a top electrode over the capacitor. The rhodium-rich structure can include rhodium alloys and the capacitor dielectric preferably has a high dielectric constant.
公开/授权文献
- US20040212002A1 Integrated circuits with rhodium-rich structures 公开/授权日：2004-10-28
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