Invention Grant
US07045837B2 Hardmask with high selectivity for Ir barriers for ferroelectric capacitor manufacturing
失效
用于铁电电容器制造的Ir屏障的高选择性硬掩模
- Patent Title: Hardmask with high selectivity for Ir barriers for ferroelectric capacitor manufacturing
- Patent Title (中): 用于铁电电容器制造的Ir屏障的高选择性硬掩模
-
Application No.: US10356314Application Date: 2003-01-31
-
Publication No.: US07045837B2Publication Date: 2006-05-16
- Inventor: Ulrich Egger , Haoren Zhuang , Yoshinoru Kumura , Kazuhiro Tomioka , Hiroyuki Kanaya
- Applicant: Ulrich Egger , Haoren Zhuang , Yoshinoru Kumura , Kazuhiro Tomioka , Hiroyuki Kanaya
- Applicant Address: DE JP
- Assignee: Infineon Technologies AG,Kabushiki Kaisha Toshiba
- Current Assignee: Infineon Technologies AG,Kabushiki Kaisha Toshiba
- Current Assignee Address: DE JP
- Agency: Lerner, David, Littenberg Krumholz & Mentlik, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
The present invention provides a ferroelectric device relatively free of fences by using a hardmask having high etching selectivity relative to an underlying barrier layer. The present invention also includes a method for suppressing the fences clinging to the sidewalls of ferroelectric devices. Additionally, the present invention provides a ferroelectric device having a hardmask relatively thin compared to an underlying barrier layer when compared to prior art devices.
Public/Granted literature
- US20040150923A1 Hardmask with high selectivity for Ir barriers for ferroelectic capacitor manufacturing Public/Granted day:2004-08-05
Information query
IPC分类:
