发明授权
US07045865B2 Semiconductor device with resistor elements formed on insulating film
有权
具有形成在绝缘膜上的电阻元件的半导体器件
- 专利标题： Semiconductor device with resistor elements formed on insulating film
- 专利标题（中）： 具有形成在绝缘膜上的电阻元件的半导体器件
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申请号： US09960495申请日： 2001-09-24
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公开(公告)号： US07045865B2公开(公告)日： 2006-05-16
- 发明人: Hiroyuki Amishiro , Toshio Kumamoto , Motoshige Igarashi , Kenji Yamaguchi
- 申请人： Hiroyuki Amishiro , Toshio Kumamoto , Motoshige Igarashi , Kenji Yamaguchi
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2001-059948 20010305
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/00 ; H01L21/20
摘要：
A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active regions are furnished close to the resistor elements. This allows the element isolating oxide film near the resistor elements to be divided into suitable strips, forestalling a concave formation at the center of the element isolating oxide film upon polishing of the film by CMP and thereby enhancing dimensional accuracy of the resistor elements upon fabrication.
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