发明授权
US07056560B2 Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
失效
基于等离子体增强化学气相沉积（PECVD）的线性硅前体和有机致孔剂的混合系统的超低介电材料
- 专利标题： Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
- 专利标题（中）： 基于等离子体增强化学气相沉积（PECVD）的线性硅前体和有机致孔剂的混合系统的超低介电材料
-
申请号： US10773060申请日： 2004-02-04
-
公开(公告)号： US07056560B2公开(公告)日： 2006-06-06
- 发明人: Kang Sub Yim , Yi Zheng , Srinivas D. Nemani , Li-Qun Xia , Eric P. Hollar
- 申请人： Kang Sub Yim , Yi Zheng , Srinivas D. Nemani , Li-Qun Xia , Eric P. Hollar
- 申请人地址： US CA Santa Clara
- 专利权人： Applies Materials Inc.
- 当前专利权人： Applies Materials Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan
- 主分类号： C23C16/56
- IPC分类号： C23C16/56 ; C23C16/48 ; C23C16/42 ; C23C16/40 ; H01L21/473
摘要：
A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.
公开/授权文献
信息查询
IPC分类:
