公开(公告)号：US20090035918A1

公开(公告)日：2009-02-05

申请号：US12252260

申请日：2008-10-15

申请人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

发明人： Xiaolin Chen ,  Srinivas D. Nemani ,  DongQing Li ,  Jeffrey C. Munro ,  Marlon E. Menezes

IPC分类号： H01L21/76

CPC分类号： H01L21/3105 ,  C23C16/402 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31612

摘要： Methods of forming a dielectric layer where the tensile stress of the layer is increased by a plasma treatment at an elevated position are described. In one embodiment, oxide and nitride layers are deposited on a substrate and patterned to form an opening. A trench is etched into the substrate. The substrate is transferred into a chamber suitable for dielectric deposition. A dielectric layer is deposited over the substrate, filling the trench and covering mesa regions adjacent to the trench. The substrate is raised to an elevated position above the substrate support and exposed to a plasma which increases the tensile stress of the substrate. The substrate is removed from the dielectric deposition chamber, and portions of the dielectric layer are removed so that the dielectric layer is even with the topmost portion of the nitride layer. The nitride and pad oxide layers are removed to form the STI structure.

摘要翻译： 描述了通过在升高的位置处的等离子体处理来增加层的拉伸应力的电介质层的形成方法。 在一个实施例中，将氧化物和氮化物层沉积在衬底上并图案化以形成开口。 沟槽被蚀刻到衬底中。 将基底转移到适合于电介质沉积的室中。 介电层沉积在衬底上，填充沟槽并覆盖与沟槽相邻的台面区域。 将衬底升高到衬底支撑件上方的升高位置并暴露于等离子体，这增加了衬底的拉伸应力。 从电介质沉积室取出基板，除去介质层的部分，使得介质层与氮化物层的最上部分均匀。 去除氮化物层和衬垫氧化物层以形成STI结构。

公开(公告)号：US20110263079A1

公开(公告)日：2011-10-27

申请号：US13088162

申请日：2011-04-15

申请人： Shi-Qing Wang

发明人： Shi-Qing Wang

IPC分类号： H01L21/302

CPC分类号： H01L21/28506 ,  H01L21/76888 ,  H01L29/66772 ,  H01L29/66969 ,  H01L29/7869

摘要： Embodiments of the disclosure generally provide methods of using an interface protection layer disposed between an active layer and a source-drain metal electrode layer. In one embodiment, a method for forming an interface protection layer in a thin film transistor includes providing a substrate having an active layer formed thereon, wherein the active layer is a metal oxide layer, forming an interface protection layer on a portion of the active layer, and forming a source-drain electrode layer on the interface protection layer.

摘要翻译： 本公开的实施例通常提供使用设置在有源层和源极 - 漏极金属电极层之间的界面保护层的方法。 在一个实施例中，在薄膜晶体管中形成界面保护层的方法包括提供其上形成有活性层的衬底，其中有源层是金属氧化物层，在有源层的一部分上形成界面保护层 并且在界面保护层上形成源极 - 漏极电极层。

公开(公告)号：US07056560B2

公开(公告)日：2006-06-06

申请号：US10773060

申请日：2004-02-04

申请人： Kang Sub Yim ,  Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric P. Hollar

发明人： Kang Sub Yim ,  Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric P. Hollar

IPC分类号： C23C16/56 ,  C23C16/48 ,  C23C16/42 ,  C23C16/40 ,  H01L21/473

CPC分类号： C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76825

摘要： A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.

摘要翻译： 一种沉积低介电常数膜的方法是通过使含有一种或多种线性无氧有机硅化合物的气体混合物，一种或多种包含一个环和一个或两个碳 - 碳双键的无氧烃化合物反应在 环和一种或多种氧化性气体。 任选地，低介电常数膜在沉积后进行后处理。 一方面，后处理是电子束处理。

公开(公告)号：US20030176058A1

公开(公告)日：2003-09-18

申请号：US10101540

申请日：2002-03-18

申请人： Applies Materials, Inc.

发明人： Timothy Weidman ,  Nikolaos Bekiaris ,  Josephine Chang ,  Phong H. Nguyen

IPC分类号： H01L021/4763

CPC分类号： H01L21/76835 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829

摘要： A method of forming a dual damascene structure on a substrate having a dielectric layer already formed thereon. In one embodiment the method includes depositing a first hard mask layer over the dielectric layer and depositing a second hard mask layer on the first hard mask layer, where the second hard mask layer is an amorphous silicon layer. Afterwards, formation of the dual damascene structure is completed by etching a metal wiring pattern and a via pattern in the dielectric layer and filling the etched metal wiring pattern and via pattern with a conductive material.

摘要翻译： 在其上已经形成有电介质层的基板上形成双镶嵌结构的方法。 在一个实施例中，该方法包括在电介质层上沉积第一硬掩模层，并在第一硬掩模层上沉积第二硬掩模层，其中第二硬掩模层是非晶硅层。 然后，通过在电介质层中蚀刻金属布线图案和通孔图案并用导电材料填充蚀刻的金属布线图案和通孔图案来完成双镶嵌结构的形成。

公开(公告)号：US20090031957A1

公开(公告)日：2009-02-05

申请号：US12252277

申请日：2008-10-15

申请人： Kirby Floyd

发明人： Kirby Floyd

IPC分类号： C23C16/00

CPC分类号： C23C16/4583 ,  Y10T74/18752

摘要： A method for adjusting a spacing of a leveling plate from a chamber body comprises attaching a mounting stud that includes a stud threaded surface to the chamber body. An adjustment screw is provided that has a first threaded surface threadingly engaged with the stud threaded surface. A bushing is provided that has a bushing threaded surface threadingly engaged with a second threaded surface of the adjustment screw. The bushing is movably coupled to the leveling plate. Coarse adjustment of the spacing between the leveling plate and the chamber body is made by rotating the adjustment screw with respect to the mounting stud. The bushing is fixed to the leveling plate. Fine adjustment of the spacing between the leveling plate and the chamber body is made by rotating the adjustment screw with respect to the mounting stud and the bushing.

摘要翻译： 用于调节调平板与室主体的间隔的方法包括将包括螺柱螺纹表面的安装螺柱附接到室主体。 提供了一种调节螺钉，其具有与螺柱螺纹表面螺纹接合的第一螺纹表面。 提供了一种衬套，其具有与调节螺钉的第二螺纹表面螺纹接合的衬套螺纹表面。 衬套可移动地联接到调平板。 通过相对于安装螺栓旋转调节螺钉来进行调平板和室体之间的间距的粗调。 套管固定在校平板上。 通过相对于安装螺柱和衬套旋转调节螺钉来调整调平板和腔体之间的间距。