发明授权
- 专利标题: Crystallization apparatus, crystallization method, thin film transistor and display apparatus
- 专利标题(中): 结晶装置,结晶法,薄膜晶体管及显示装置
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申请号: US10624555申请日: 2003-07-23
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公开(公告)号: US07056626B2公开(公告)日: 2006-06-06
- 发明人: Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 申请人: Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 申请人地址: JP Yokohama
- 专利权人: Advanced LCD Technologies Development Center Co., Ltd.
- 当前专利权人: Advanced LCD Technologies Development Center Co., Ltd.
- 当前专利权人地址: JP Yokohama
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2002-215323 20020724
- 主分类号: G01F9/00
- IPC分类号: G01F9/00
摘要:
The present invention is directed to a crystallization apparatus including an illumination system to illuminate a phase shift mask, which converts a light beam from the illumination system into a light beam that has a light intensity distribution of an inverse peak pattern having a minimum intensity in an area corresponding to a phase shift portion of the phase shift mask. The crystallization apparatus further includes an optical member to form on a predetermined plane a light intensity distribution of a concave pattern, which has a light intensity that is minimum in an area corresponding to the phase shift portion and increases toward the circumference of that area based on the light from the illumination system, and an image-forming optical system to set a surface of the polycrystalline semiconductor film or the amorphous semiconductor film or its conjugate plane and the predetermined plane to an optical conjugate relationship.
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