发明授权
US07060591B2 Method for fabricating a semiconductor device by transferring a layer to a support with curvature
失效
通过将层转移到具有曲率的支撑体来制造半导体器件的方法
- 专利标题： Method for fabricating a semiconductor device by transferring a layer to a support with curvature
- 专利标题（中）： 通过将层转移到具有曲率的支撑体来制造半导体器件的方法
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申请号： US11079287申请日： 2005-03-15
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公开(公告)号： US07060591B2公开(公告)日： 2006-06-13
- 发明人: Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
- 申请人： Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
- 申请人地址： JP Atsugi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2001-402016 20011228
- 主分类号： H01L21/461
- IPC分类号： H01L21/461
摘要：
The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
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