- 专利标题: Semiconductor device and manufacturing method of the same
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申请号: US10870440申请日: 2004-06-18
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公开(公告)号: US07061107B2公开(公告)日: 2006-06-13
- 发明人: Mitsuo Umemoto , Kazumasa Tanida
- 申请人: Mitsuo Umemoto , Kazumasa Tanida
- 申请人地址: JP Osaka JP Kyoto
- 专利权人: Sanyo Electric Co., Ltd.,Rohm Co., Ltd.
- 当前专利权人: Sanyo Electric Co., Ltd.,Rohm Co., Ltd.
- 当前专利权人地址: JP Osaka JP Kyoto
- 代理机构: Morrison & Foerster LLP
- 优先权: JP2003-177863 20030623
- 主分类号: H01L23/34
- IPC分类号: H01L23/34
摘要:
The invention realizes excellent electrical and mechanical connection between electrodes in a packaging structure where a plurality of semiconductor chips having electrodes are connected with each other through the low-melting metallic members. Bump electrodes are formed on a front surface of a first semiconductor chip. Penetrating holes are formed in a second semiconductor chip, and a penetrating electrode having a gap in a center is formed in each of the penetrating holes. Low-melting metallic members are interposed between connecting surfaces of the bump electrodes and the penetrating electrodes, and a part of each of the low-melting metallic members flows in each of the gaps of the penetrating electrodes when dissolved. This prevents short-circuiting between the bump electrodes which is caused by oversupplying the low-melting metallic members between the adjacent bump electrodes.