发明授权
- 专利标题: Method to improve planarity of electroplated copper
- 专利标题(中): 提高电镀铜平面度的方法
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申请号: US10763306申请日: 2004-01-23
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公开(公告)号: US07064068B2公开(公告)日: 2006-06-20
- 发明人: Shih-Wei Chou , Ming-Hsing Tsai , Ming-Wei Lin
- 申请人: Shih-Wei Chou , Ming-Hsing Tsai , Ming-Wei Lin
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
Narrow trenches in a substrate tend to fill more rapidly than wide trenches This results in a non-planar surface once all trenches have been filled. The present invention solves this problem by performing the electro-deposition in two steps. The plating bath used during the first step, is optimized for filling narrow trenches while the plating bath used during the second step, is optimized for filling wide trenches. The net result is a final layer having a planar surface, with all trenches being properly filled.
公开/授权文献
- US20050164495A1 Method to improve planarity of electroplated copper 公开/授权日:2005-07-28
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