发明授权
- 专利标题： Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same
- 专利标题（中）： 磁阻元件和磁阻磁头，磁记录装置和使用其的磁阻存储器件
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申请号： US11060028申请日： 2005-02-16
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公开(公告)号： US07079361B2公开(公告)日： 2006-07-18
- 发明人: Yasunari Sugita , Masayoshi Hiramoto , Nozomu Matsukawa , Mitsuo Satomi , Yoshio Kawashima , Akihiro Odagawa
- 申请人： Yasunari Sugita , Masayoshi Hiramoto , Nozomu Matsukawa , Mitsuo Satomi , Yoshio Kawashima , Akihiro Odagawa
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Hamre, Schumann, Mueller & Larson, P.C.
- 优先权： JP2001-126657 20010424; JP2001-379998 20011213
- 主分类号： G11B5/127
- IPC分类号： G11B5/127
摘要：
The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.