发明授权
- 专利标题： Single phase fluid imprint lithography method
- 专利标题（中）： 单相流体压印光刻法
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申请号： US10677639申请日： 2003-10-02
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公开(公告)号： US07090716B2公开(公告)日： 2006-08-15
- 发明人: Ian M. McMackin , Nicholas A. Stacey , Daniel A. Babbs , Duane J. Voth , Michael P. C. Watts , Van N. Truskett , Frank Y. Xu , Ronald D. Voisin , Pankaj B. Lad
- 申请人： Ian M. McMackin , Nicholas A. Stacey , Daniel A. Babbs , Duane J. Voth , Michael P. C. Watts , Van N. Truskett , Frank Y. Xu , Ronald D. Voisin , Pankaj B. Lad
- 申请人地址： US TX Austin US TX Austin
- 专利权人： Molecular Imprints, Inc.,Board of Regents, The University of Texas System
- 当前专利权人： Molecular Imprints, Inc.,Board of Regents, The University of Texas System
- 当前专利权人地址： US TX Austin US TX Austin
- 代理商 Michael D. Carter
- 主分类号： B01D19/00
- IPC分类号： B01D19/00
摘要：
The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying a transport of the gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to the viscous liquid being deposited. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.
公开/授权文献
- US20050072755A1 Single phase fluid imprint lithography method 公开/授权日：2005-04-07
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