Invention Grant
US07090965B2 Method for enhancing adhesion between reworked photoresist and underlying oxynitride film
有权
用于增强再加工的光致抗蚀剂和潜在的氮氧化物膜之间的粘附性的方法
- Patent Title: Method for enhancing adhesion between reworked photoresist and underlying oxynitride film
- Patent Title (中): 用于增强再加工的光致抗蚀剂和潜在的氮氧化物膜之间的粘附性的方法
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Application No.: US10611196Application Date: 2003-07-01
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Publication No.: US07090965B2Publication Date: 2006-08-15
- Inventor: Wen-Bin Wu , Yuan-Shan Wu , Yi-Nan Chen , Teng-Yen Huang
- Applicant: Wen-Bin Wu , Yuan-Shan Wu , Yi-Nan Chen , Teng-Yen Huang
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Agency: Quintero Law Office
- Priority: TW92107990A 20030408
- Main IPC: G03F7/00
- IPC: G03F7/00
Abstract:
A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.
Public/Granted literature
- US20040202964A1 Method for enhancing adhesion between reworked photoresist and underlying oxynitride film Public/Granted day:2004-10-14
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