摘要:
A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.
摘要:
A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.
摘要翻译:防止再加工的光致抗蚀剂层中的重复塌陷的方法。 首先,施加含氧等离子体以除去塌陷的光致抗蚀剂。 因为含有氧的等离子体与包含SiO x N y Y y的底部防反射层反应,所以在底部防反射层上产生一些酸,导致在 随后再加工光致抗蚀剂。 接下来,在去除塌陷的光致抗蚀剂层之后,在抗反射层上进行碱性溶液处理。 最后,在反射层上形成返工光致抗蚀剂,而没有底切。
摘要:
A method of forming a patterned photoresist layer. First, an anti-reflection coating layer is formed on a substrate. Next, a first bake is performed. A photoresist layer is then formed on the anti-reflection coating layer. Exposure is performed. A second bake is performed, wherein the temperature difference between the first bake and the second bake is about 35 ° C.˜55 ° C. Finally, development is performed. The patterned photoresist layer features have perfect profiles in accordance with this invention.
摘要:
Disclosed is a test mask structure. The test mask structure of the present invention comprises at least an array pattern region, in a certain proportion to the final product, having a first pattern density according to the certain proportion; and at least one test mask pattern region having a second pattern density. In the test mask structure of the present invention, the required pattern density is obtained by adjusting the area of the array pattern region and the area of the test mask pattern region according to the first pattern density and the second pattern density.
摘要:
An auxiliary lock includes an exterior lock assembly having a knob and an actuating plate that is connected to the knob to rotate therewith. A casing is mounted inside a door for rotatably supporting a knob that is also connected to the actuating plate to rotate therewith. A control plate is mounted in the casing and includes a first end extended beyond the casing for manual operation. A second end of the control plate includes a notch releasably engaged with one of a number of teeth of an engaging wheel mounted in the casing. The control plate is movable vertically and retained in place by a positioning element. The engaging wheel is connected to the actuating plate to rotate therewith.
摘要:
A method of forming a ring-type capacitor is provided. The method includes providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer defining a ring pattern; removing the substrate by using the patterned mask layer as a mask to form a ring-type trench in the substrate; the ring-type trench including an inner wall and an outer wall; and forming a capacitor structure on the inner wall and the outer wall of the ring-type trench.
摘要:
An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuration on the substrate was damaged during process.
摘要:
A method for evaluating reticle registration between two reticle patterns. A wafer is defined and etched to form a first exposure pattern, by photolithography with a first reticle having a first reticle pattern thereon. A photoresist layer is formed over the wafer and defined as a second exposure pattern, by photolithography with a second reticle having a second reticle pattern thereon. A deviation value between the first and second exposure patterns is measured by a CD-SEM. The deviation value is calibrated according to the scaling degree and the overlay offset to obtain a registration data. The reticle registration between the two reticle patterns is evaluated based on the registration data.
摘要:
A lock device that may be locked automatically includes a base fixed on a door plate. An actuating tube received in the hole of the base is provided with a locking member combined with a handle. The lock core unit has a lock core that may drive an actuating plate to rotate. The drive wheel has a drive slot for insertion of the actuating plate, so that the drive wheel and the actuating plate may be rotated simultaneously. An elastic member has two stop ends rested on the leg of the restoring wheel, and rested on the two sides of the ear plate of the locking plate. The drive plate has a first end inserted into an unlocking rotation knob of the other side of the door plate, and a second end inserted into the drive slot of the drive wheel.