Method for enhancing adhesion between reworked photoresist and underlying oxynitride film
    1.
    发明授权
    Method for enhancing adhesion between reworked photoresist and underlying oxynitride film 有权
    用于增强再加工的光致抗蚀剂和潜在的氮氧化物膜之间的粘附性的方法

    公开(公告)号:US07090965B2

    公开(公告)日:2006-08-15

    申请号:US10611196

    申请日:2003-07-01

    IPC分类号: G03F7/00

    摘要: A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.

    摘要翻译: 一种用于增强再加工的光致抗蚀剂和潜在的氮氧化合物膜之间的粘合性的方法。 在衬底上的氧氮化物层上形成光致抗蚀剂图案层。 通过酸性溶液或含氧等离子体去除光致抗蚀剂图案层。 使用显影液在氧氮化物层上进行表面处理,以通过除去上覆的光致抗蚀剂图案层来修复损坏的氮氧化物层。 在氧氮化物层上形成再加工的光致抗蚀剂图案层。

    Method of preventing repeated collapse in a reworked photoresist layer
    2.
    发明授权
    Method of preventing repeated collapse in a reworked photoresist layer 有权
    防止再加工光致抗蚀剂层中重复塌陷的方法

    公开(公告)号:US06929902B2

    公开(公告)日:2005-08-16

    申请号:US10370441

    申请日:2003-02-20

    摘要: A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.

    摘要翻译: 防止再加工的光致抗蚀剂层中的重复塌陷的方法。 首先,施加含氧等离子体以除去塌陷的光致抗蚀剂。 因为含有氧的等离子体与包含SiO x N y Y y的底部防反射层反应,所以在底部防反射层上产生一些酸,导致在 随后再加工光致抗蚀剂。 接下来,在去除塌陷的光致抗蚀剂层之后,在抗反射层上进行碱性溶液处理。 最后,在反射层上形成返工光致抗蚀剂,而没有底切。

    Method of forming patterned photoresist layer
    4.
    发明授权
    Method of forming patterned photoresist layer 有权
    形成图案化光刻胶层的方法

    公开(公告)号:US06998226B2

    公开(公告)日:2006-02-14

    申请号:US10193464

    申请日:2002-07-10

    IPC分类号: G03F7/38 G03F7/40

    摘要: A method of forming a patterned photoresist layer. First, an anti-reflection coating layer is formed on a substrate. Next, a first bake is performed. A photoresist layer is then formed on the anti-reflection coating layer. Exposure is performed. A second bake is performed, wherein the temperature difference between the first bake and the second bake is about 35 ° C.˜55 ° C. Finally, development is performed. The patterned photoresist layer features have perfect profiles in accordance with this invention.

    摘要翻译: 形成图案化光致抗蚀剂层的方法。 首先,在基板上形成防反射涂层。 接下来,进行第一烘焙。 然后在抗反射涂层上形成光致抗蚀剂层。 曝光进行。 进行第二烘烤,其中第一烘烤和第二烘烤之间的温度差为约35℃〜55℃。最后,进行显影。 图案化的光致抗蚀剂层特征具有根据本发明的完美的轮廓。

    Test mask structure
    5.
    发明申请
    Test mask structure 有权
    测试面罩结构

    公开(公告)号:US20050127356A1

    公开(公告)日:2005-06-16

    申请号:US10732370

    申请日:2003-12-11

    申请人: Wen-Bin Wu

    发明人: Wen-Bin Wu

    摘要: Disclosed is a test mask structure. The test mask structure of the present invention comprises at least an array pattern region, in a certain proportion to the final product, having a first pattern density according to the certain proportion; and at least one test mask pattern region having a second pattern density. In the test mask structure of the present invention, the required pattern density is obtained by adjusting the area of the array pattern region and the area of the test mask pattern region according to the first pattern density and the second pattern density.

    摘要翻译: 公开了一种测试掩模结构。 本发明的测试掩模结构至少包括与最终产品一定比例的阵列图案区域,其具有按照一定比例的第一图案密度; 以及具有第二图案密度的至少一个测试掩模图案区域。 在本发明的测试掩模结构中,通过根据第一图案密度和第二图案密度调整阵列图案区域的面积和测试掩模图案区域的面积来获得所需的图案密度。

    Auxiliary lock with a control plate for preventing unlatching from
outside
    6.
    发明授权
    Auxiliary lock with a control plate for preventing unlatching from outside 有权
    辅助锁具有控制板,用于防止从外部松开

    公开(公告)号:US6145358A

    公开(公告)日:2000-11-14

    申请号:US291287

    申请日:1999-04-14

    申请人: Wen-Bin Wu

    发明人: Wen-Bin Wu

    摘要: An auxiliary lock includes an exterior lock assembly having a knob and an actuating plate that is connected to the knob to rotate therewith. A casing is mounted inside a door for rotatably supporting a knob that is also connected to the actuating plate to rotate therewith. A control plate is mounted in the casing and includes a first end extended beyond the casing for manual operation. A second end of the control plate includes a notch releasably engaged with one of a number of teeth of an engaging wheel mounted in the casing. The control plate is movable vertically and retained in place by a positioning element. The engaging wheel is connected to the actuating plate to rotate therewith.

    摘要翻译: 辅助锁包括具有旋钮的外部锁定组件和连接到旋钮以随之旋转的致动板。 壳体安装在门内,用于可旋转地支撑旋钮,该旋钮也连接到致动板以与其一起旋转。 控制板安装在壳体中,并且包括延伸超出壳体的用于手动操作的第一端。 控制板的第二端包括可拆卸地与安装在壳体中的接合轮的多个齿中的一个啮合的凹口。 控制板可以垂直移动并通过定位元件保持在适当位置。 接合轮连接到致动板以与其一起旋转。

    Method of forming a trench capacitor
    7.
    发明授权
    Method of forming a trench capacitor 有权
    形成沟槽电容器的方法

    公开(公告)号:US07915133B2

    公开(公告)日:2011-03-29

    申请号:US11953481

    申请日:2007-12-10

    IPC分类号: H01L21/20

    CPC分类号: H01L29/945 H01L29/66181

    摘要: A method of forming a ring-type capacitor is provided. The method includes providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer defining a ring pattern; removing the substrate by using the patterned mask layer as a mask to form a ring-type trench in the substrate; the ring-type trench including an inner wall and an outer wall; and forming a capacitor structure on the inner wall and the outer wall of the ring-type trench.

    摘要翻译: 提供一种形成环型电容器的方法。 该方法包括提供基板; 在所述衬底上形成图案化掩模层,所述图案化掩模层限定环形图案; 通过使用图案化掩模层作为掩模去除衬底,以在衬底中形成环型沟槽; 所述环形沟槽包括内壁和外壁; 并在环形沟槽的内壁和外壁上形成电容器结构。

    Overlay mark
    8.
    发明授权
    Overlay mark 有权
    叠加标记

    公开(公告)号:US07480892B2

    公开(公告)日:2009-01-20

    申请号:US11513196

    申请日:2006-08-31

    IPC分类号: G06F17/50

    摘要: An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuration on the substrate was damaged during process.

    摘要翻译: 形成在光掩模上的覆盖标记,包括第一矩形区域,第二矩形区域,第三矩形区域和第四矩形区域,每个矩形区域具有相同的图案构造,第一矩形区域的长边和较长的 所述第一矩形区域和所述第三矩形区域具有相同的第一图案构造,所述第一图案构造具有第一图案元素,所述第二矩形区域的长边和所述第四矩形区域的长边平行 并且第二和第四矩形区域具有相同的具有第二图案元素的第二图案构造,第一矩形区域的长边与第二矩形区域的长边垂直; 其中,所述第一图案元件与所述第二图案元件不同,用于当所述基板上的所述第一图案配置在处理期间被损坏时,所述第二图案构造被选择为对齐。

    Method of evaluating reticle pattern overlay registration
    9.
    发明授权
    Method of evaluating reticle pattern overlay registration 有权
    评估标线图案重叠注册的方法

    公开(公告)号:US06987053B2

    公开(公告)日:2006-01-17

    申请号:US10792345

    申请日:2004-03-03

    IPC分类号: H01L21/76

    摘要: A method for evaluating reticle registration between two reticle patterns. A wafer is defined and etched to form a first exposure pattern, by photolithography with a first reticle having a first reticle pattern thereon. A photoresist layer is formed over the wafer and defined as a second exposure pattern, by photolithography with a second reticle having a second reticle pattern thereon. A deviation value between the first and second exposure patterns is measured by a CD-SEM. The deviation value is calibrated according to the scaling degree and the overlay offset to obtain a registration data. The reticle registration between the two reticle patterns is evaluated based on the registration data.

    摘要翻译: 一种用于评估两个掩模版图案之间的掩模版配准的方法。 通过用其上具有第一掩模版图案的第一掩模版通过光刻来限定和蚀刻晶片以形成第一曝光图案。 在晶片上形成光致抗蚀剂层,并通过光刻法将其定义为第二曝光图案,其上具有第二掩模版图案的第二掩模版。 通过CD-SEM测量第一和第二曝光图案之间的偏差值。 根据缩放程度和覆盖偏移校正偏差值,以获得注册数据。 基于登记数据评价两个掩模图案之间的掩模版登记。

    Lock device that may be locked automatically

    公开(公告)号:US06536249B2

    公开(公告)日:2003-03-25

    申请号:US10134527

    申请日:2002-04-30

    申请人: Wen-Bin Wu

    发明人: Wen-Bin Wu

    IPC分类号: E05B1310

    摘要: A lock device that may be locked automatically includes a base fixed on a door plate. An actuating tube received in the hole of the base is provided with a locking member combined with a handle. The lock core unit has a lock core that may drive an actuating plate to rotate. The drive wheel has a drive slot for insertion of the actuating plate, so that the drive wheel and the actuating plate may be rotated simultaneously. An elastic member has two stop ends rested on the leg of the restoring wheel, and rested on the two sides of the ear plate of the locking plate. The drive plate has a first end inserted into an unlocking rotation knob of the other side of the door plate, and a second end inserted into the drive slot of the drive wheel.