发明授权
- 专利标题： Overvoltage detection apparatus, method, and system
- 专利标题（中）： 过电压检测装置，方法和系统
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申请号： US10880337申请日： 2004-06-29
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公开(公告)号： US07102358B2公开(公告)日： 2006-09-05
- 发明人: Ali Keshavarzi , Fabrice Paillet , Muhammad M Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H Tang , Mohsen Alavi , Vivek K De
- 申请人： Ali Keshavarzi , Fabrice Paillet , Muhammad M Khellah , Dinesh Somasekhar , Yibin Ye , Stephen H Tang , Mohsen Alavi , Vivek K De
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： LeMoine Patent Services, PLLC
- 主分类号： G01R31/26
- IPC分类号： G01R31/26
摘要：
A transistor may have degraded characteristics because of an overvoltage condition. The degraded characteristics may be sensed to determine that the transistor has previously been subjected to an overvoltage condition.
公开/授权文献
- US20050285616A1 Overvoltage detection apparatus, method, and system 公开/授权日：2005-12-29
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