发明授权
- 专利标题： Strained silicon layer fabrication with reduced dislocation defect density
- 专利标题（中）： 应变硅层制造具有减少的位错缺陷密度
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申请号： US10769316申请日： 2004-01-30
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公开(公告)号： US07105393B2公开(公告)日： 2006-09-12
- 发明人: Liang-Gi Yao , Tien-Chih Chang , CC Lin , Shin-Chang Chen , Mong-Song Liang
- 申请人： Liang-Gi Yao , Tien-Chih Chang , CC Lin , Shin-Chang Chen , Mong-Song Liang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Tung & Associates
- 主分类号： H01L21/338
- IPC分类号： H01L21/338
摘要：
A strained silicon layer fabrication employs a substrate having successively formed thereover: (1) a first silicon-germanium alloy material layer; (2) a first silicon layer; (3) a second silicon-germanium alloy material layer; and (4) a second silicon layer. Within the fabrication each of the first silicon-germanium alloy layer and the second silicon-germanium alloy layer is formed of a thickness less than a threshold thickness for dislocation defect formation, such as to provide attenuated dislocation defect formation within the strained silicon layer fabrication.
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