发明授权
- 专利标题： Silicon etching method
- 专利标题（中）： 硅蚀刻法
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申请号： US10647433申请日： 2003-08-26
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公开(公告)号： US07109123B2公开(公告)日： 2006-09-19
- 发明人: Takanori Mimura , Kazuya Nagaseki , Kenji Yamamoto , Katsumi Horiguchi , Yahui Huang
- 申请人： Takanori Mimura , Kazuya Nagaseki , Kenji Yamamoto , Katsumi Horiguchi , Yahui Huang
- 申请人地址： JP Tokyo-To
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo-To
- 代理机构： Smith, Gambrell & Russell, LLP
- 优先权： JP2002-245930 20020826
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilicon gas, such as SiF4 gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.
公开/授权文献
- US20040097090A1 Silicon etching method 公开/授权日：2004-05-20
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