-
公开(公告)号：US07109123B2
公开(公告)日：2006-09-19
申请号：US10647433
申请日：2003-08-26
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01J37/3266 , H01J2237/334 , H01L21/3065 , H01L21/308 , H01L21/76898
摘要： A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilicon gas, such as SiF4 gas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.
摘要翻译： Si蚀刻方法通过等离子体辅助蚀刻工艺蚀刻保持在放置在处理容器中的基座上的Si晶片。 通过混合诸如SF 6气体的氟化硫气体或碳氟化合物气体O 2气体和诸如SiF 4气体的氟硅气体制备的混合蚀刻气体， 将气体供应到处理容器中。 将40MHz以上的RF功率施加到混合蚀刻气体以产生等离子体。 用等离子体中所含的自由基和离子蚀刻Si晶片。
-
公开(公告)号：US07344652B2
公开(公告)日：2008-03-18
申请号：US11487516
申请日：2006-07-17
CPC分类号： H01L21/67069 , H01J37/32623 , H01L21/3065 , H01L21/3081 , H01L21/3083
摘要： An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).
摘要翻译： 一种蚀刻方法，用于在被蚀刻的物体（212）中形成具有毫米级的开口尺寸（R）的凹部（220），例如半导体晶片。 在物体（212）上形成具有对应于凹部（220）的开口的面罩（214）。 将具有掩模（214）的物体（212）放置在用于等离子体蚀刻的处理容器中，并使用等离子体蚀刻在其中。 掩模（214）的开口周围部分的材料与物体（212）的材料（例如硅）相同。 因此，凹部（220）可以形成为不形成基本上在底部（222）中形成副沟槽形状（通过蚀刻其周边比中心更深的形状形成的形状）。
-
公开(公告)号：US20060255447A1
公开(公告)日：2006-11-16
申请号：US11487516
申请日：2006-07-17
IPC分类号： H01L23/48
CPC分类号： H01L21/67069 , H01J37/32623 , H01L21/3065 , H01L21/3081 , H01L21/3083
摘要： An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).
摘要翻译： 一种蚀刻方法，用于在被蚀刻的物体（212）中形成具有毫米级的开口尺寸（R）的凹部（220），例如半导体晶片。 在物体（212）上形成具有对应于凹部（220）的开口的面罩（214）。 将具有掩模（214）的物体（212）放置在用于等离子体蚀刻的处理容器中，并使用等离子体蚀刻在其中。 掩模（214）的开口周围部分的材料与物体（212）的材料（例如硅）相同。 因此，凹部（220）可以形成为不形成基本上在底部（222）中形成副沟槽形状（通过蚀刻其周边比中心更深的形状形成的形状）。
-
公开(公告)号：US07022616B2
公开(公告)日：2006-04-04
申请号：US10380428
申请日：2001-09-13
申请人： Takanori Mimura , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa
发明人： Takanori Mimura , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa
IPC分类号： H01L21/302
CPC分类号： H01L21/32137 , H01J37/32082 , H01J37/32091 , H01J37/32165 , H01J37/3266 , H01J2237/3347 , H01L21/3065 , H01L21/3081
摘要： This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.
摘要翻译： 本发明提供以下高速硅蚀刻方法。 具有硅区域的待处理物体W被设定为与可以保持在真空中的处理室中的处理空间接触。 将蚀刻气体引入工艺空间，形成气压为13Pa〜1333Pa（100mTorr〜10Torr）的气体气氛。 在施加RF功率时产生等离子体。 在等离子体中，离子的带电粒子数和自由基的数量之和增加，并且以比常规蚀刻更高的速度进行硅区的蚀刻。
-
公开(公告)号：US20050082255A1
公开(公告)日：2005-04-21
申请号：US10497534
申请日：2002-12-09
IPC分类号： C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/308 , C23F1/00
CPC分类号： H01L21/67069 , H01J37/32623 , H01L21/3065 , H01L21/3081 , H01L21/3083
摘要： An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).
摘要翻译： 一种蚀刻方法，用于在被蚀刻的物体（212）中形成具有毫米级的开口尺寸（R）的凹部（220），例如半导体晶片。 在物体（212）上形成具有对应于凹部（220）的开口的面罩（214）。 将具有掩模（214）的物体（212）放置在用于等离子体蚀刻的处理容器中，并使用等离子体蚀刻在其中。 掩模（214）的开口周围部分的材料与物体（212）的材料（例如硅）相同。 因此，凹部（220）可以形成为不形成基本上在底部（222）中形成副沟槽形状（通过蚀刻其周边比中心更深的形状形成的形状）。
-
公开(公告)号：US07141178B2
公开(公告)日：2006-11-28
申请号：US10497534
申请日：2002-12-09
CPC分类号： H01L21/67069 , H01J37/32623 , H01L21/3065 , H01L21/3081 , H01L21/3083
摘要： An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).
-
公开(公告)号：US07813681B2
公开(公告)日：2010-10-12
申请号：US12054444
申请日：2008-03-25
申请人： Takanori Mimura , Junichi Ito , Shinichi Otani
发明人： Takanori Mimura , Junichi Ito , Shinichi Otani
IPC分类号： G03G15/08
CPC分类号： G03G15/0813
摘要： A contact pressure setting method of setting a contact pressure between contact members of an image forming apparatus. A film member is inserted into a gap between the contact members and the contact pressure is set so that a pulling force to pull out the film member lies within a predetermined range. Thus, the contact pressure can be accurately and easily recognized and the contact pressure can be set to be uniform.
摘要翻译： 一种设定图像形成装置的接触构件之间的接触压力的接触压力设定方法。 将膜构件插入到接触构件之间的间隙中，并且设定接触压力，使得拉出膜构件的拉力位于预定范围内。 因此，可以准确且容易地识别接触压力，并且可以将接触压力设定为均匀。
-
公开(公告)号：US20060063385A1
公开(公告)日：2006-03-23
申请号：US11231979
申请日：2005-09-22
申请人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
发明人： Koji Maruyama , Yusuke Hirayama , Nozomi Hirai , Takanori Mimura
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32132
摘要： An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed loaded in an evacuable processing vessel, wherein the object has a mask layer of a predetermined pattern, a silicon layer to be etched formed below the mask layer and the stopper layer formed below the silicon layer. The etching method includes a first etching process for forming an opening with a tapered wall surface in the silicon layer by using a first etching gas including a fluorine-containing gas and O2 but not HBr; and a second etching process for etching the opening by using a second etching gas including a fluorine-containing gas, O2 and HBr.
摘要翻译： 蚀刻方法通过用作用在可抽出的处理容器中的被处理物体上的蚀刻气体的等离子体进行蚀刻，形成具有延伸到阻挡层的基本上垂直的剖面的开口，其中该物体具有掩模层 预定图案，在掩模层下形成的待蚀刻硅层和形成在硅层下面的阻挡层。 蚀刻方法包括通过使用包含含氟气体而不是HBr的第一蚀刻气体在硅层中形成具有锥形壁表面的开口的第一蚀刻工艺; 以及通过使用包括含氟气体O 2 H 2和HBr的第二蚀刻气体蚀刻开口的第二蚀刻工艺。
-
公开(公告)号：US20120132367A1
公开(公告)日：2012-05-31
申请号：US13303392
申请日：2011-11-23
IPC分类号： H01L21/306 , C23C16/455
CPC分类号： H01J37/32449 , C23C16/45561 , C23C16/5096 , H01J37/32091 , H01J37/32366 , H01J37/32385 , H01J37/3244
摘要： There is provided a processing apparatus including a processing gas discharge unit provided within a processing chamber so as to face a mounting table and configured to discharge a processing gas into the processing chamber; a first space corresponding to a central portion of a processing target object; a second space corresponding to an edge portion of the processing target object; at least one third space formed between the first space and the second space; and a processing gas distribution unit including processing gas distribution pipes and valves. The spaces are provided within the processing gas discharge unit and partitioned by partition walls. At the spaces, there are formed discharge holes for discharging the processing gas. The processing gas distribution pipes communicate with the spaces, and the valves are opened or closed to allow adjacent processing gas distribution pipes to communicate with each other or be isolated from each other.
摘要翻译： 提供了一种处理装置，其包括：处理气体排出单元，设置在处理室内，以面对安装台并构造成将处理气体排放到处理室中; 对应于处理目标对象的中心部分的第一空间; 对应于处理目标对象的边缘部分的第二空间; 形成在所述第一空间和所述第二空间之间的至少一个第三空间; 以及包括处理气体分配管和阀的处理气体分配单元。 这些空间设置在处理气体排出单元内并由分隔壁分隔开。 在空间处，形成有用于排出处理气体的排出孔。 处理气体分配管与空间连通，并且阀被打开或关闭以允许相邻处理气体分配管彼此连通或彼此隔离。
-
公开(公告)号：US20110048453A1
公开(公告)日：2011-03-03
申请号：US12873458
申请日：2010-09-01
申请人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
发明人： Masanobu Honda , Hidetoshi Hanaoka , Taichi Hirano , Takanori Mimura , Manabu Iwata , Taketoshi Okajo
IPC分类号： C25F5/00
CPC分类号： C23C16/4405 , H01J37/32862
摘要： Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.
摘要翻译： 提供一种能够有效地除去沉积在ESC外周上的含有Si和Al的CF系肩层沉积物的室清洗方法。 在约400mTorr至约800mTorr的压力下，向ESC24的外周边24a供应O 2气体和F气体的混合气体; 从混合气体产生的等离子体照射到ESC24的外周24a上; 作为掩模气体的O 2单体气体除外周边24a供给到ESC24的上表面; 并且附着在外周24a上的肩部沉积物50被分解除去，同时防止除了外周边24a之外的ESC 24的顶面暴露于F基。
-
-
-
-
-
-
-
-
-
搜索结果
22 条记录 (耗时 0.026 秒)
