Invention Grant
- Patent Title: Ion implanting apparatus and ion implanting method using the same
- Patent Title (中): 离子注入装置和使用其的离子注入方法
-
Application No.: US10964735Application Date: 2004-10-15
-
Publication No.: US07112810B2Publication Date: 2006-09-26
- Inventor: Gyeong-Su Keum , Seung-Ki Chae , Hyung-Sik Hong , Sang-Yeob Cha , Jae-Hyun Han , Tae-Sub Im , Hyun-Kyu Kang , Gil-Jung Yun , Doo-Guen Song
- Applicant: Gyeong-Su Keum , Seung-Ki Chae , Hyung-Sik Hong , Sang-Yeob Cha , Jae-Hyun Han , Tae-Sub Im , Hyun-Kyu Kang , Gil-Jung Yun , Doo-Guen Song
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lee & Morse, P.C.
- Priority: KR10-2003-0092634 20031217
- Main IPC: H01J37/08
- IPC: H01J37/08 ; H01J37/244
Abstract:
In an ion implanting apparatus and an ion implanting method using the same, the ion implanting apparatus includes a disk chamber containing a rotatable disk, a wafer mounted on the rotatable disk, and a charge sensor for monitoring a charged state of the wafer, the charge sensor being fixed to the disk chamber to be adjacent to and facing a surface of the wafer. An output of the charge sensor may be used as feedback to control the charged state of the wafer.
Public/Granted literature
- US20050133737A1 Ion implanting apparatus and ion implanting method using the same Public/Granted day:2005-06-23
Information query
