Method of forming metallization in a semiconductor device using selective plasma treatment
    5.
    发明申请
    Method of forming metallization in a semiconductor device using selective plasma treatment 审中-公开
    使用选择性等离子体处理在半导体器件中形成金属化的方法

    公开(公告)号:US20100068881A1

    公开(公告)日:2010-03-18

    申请号:US12458676

    申请日:2009-07-20

    Abstract: A method of forming metallization in a semiconductor device, including forming an interlayer insulation layer on a semiconductor layer, forming a hole in the interlayer insulation layer by removing a portion of the interlayer insulation layer, forming a metal seed layer in the hole and on an upper surface of the interlayer insulation layer, such that the metal seed layer includes a first portion on the upper surface of the interlayer insulation layer, a second portion on an upper side surface of the hole, and a third portion on central and lower side surfaces of the hole, selectively plasma-treating a portion of the metal seed layer, forming a metal layer on the metal seed layer to fill the hole, and forming metallization by polishing the metal layer.

    Abstract translation: 一种在半导体器件中形成金属化的方法,包括在半导体层上形成层间绝缘层,通过去除所述层间绝缘层的一部分,在所述层间绝缘层中形成孔,在所述孔中形成金属种子层 所述层间绝缘层的上表面,使得所述金属种子层包括所述层间绝缘层的上表面上的第一部分,所述孔的上侧表面上的第二部分,以及在所述中间和下侧表面上的第三部分 ,选择性地等离子体处理金属种子层的一部分,在金属种子层上形成金属层以填充孔,并通过抛光金属层形成金属化。

    Fly back transformer, and its inductance adjusting method and device
    8.
    发明授权
    Fly back transformer, and its inductance adjusting method and device 失效
    回馈变压器及其电感调节方法及装置

    公开(公告)号:US5745367A

    公开(公告)日:1998-04-28

    申请号:US655020

    申请日:1996-05-29

    Applicant: Sang Yeob Cha

    Inventor: Sang Yeob Cha

    CPC classification number: H01F3/14 H01F41/02

    Abstract: An FBT, its inductance adjusting method and a device capable of adjusting a gap between the top and bottom cores features a stable inductance value required for the FBT even without requiring a separate spacer between the top and bottom ferrite cores. An adhesive agent is applied to top end of a coupling portion of the bottom core provided within the low voltage bobbin, and a predetermined inductance value between the bottom core and the top core is obtained by a hardening of the adhesive agent therebetween without having a separate gap maintaining arrangement. The inductance value within the FBT can be precisely adjusted even without requiring a separate spacer at the gap portion between the top and bottom ferrite cores of FBT. In addition, it is not necessary to use a U-clip for fixing the top and bottom ferrite cores.

    Abstract translation: FBT,其电感调节方法和能够调节顶部和底部芯之间的间隙的器件具有FBT所需的稳定的电感值,即使不需要顶部和底部铁氧体磁芯之间的单独间隔。 将粘合剂施加到设置在低压线轴内的底芯的耦合部分的顶端,并且通过其间的粘合剂硬化获得底芯和顶芯之间的预定电感值,而不需要单独的 差距维持安排。 即使不需要在FBT的顶部和底部铁氧体磁芯之间的间隙部分处需要单独的间隔,也可以精确地调整FBT内的电感值。 此外,不需要使用U形夹固定顶部和底部铁氧体磁芯。

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