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    Method of testing ion implantation energy in ion implantation equipment
    1.
    发明授权
    Method of testing ion implantation energy in ion implantation equipment 有权
    离子注入设备中离子注入能量的测试方法

    公开(公告)号：US06867055B2

    公开(公告)日：2005-03-15

    申请号：US10776594

    申请日：2004-02-12

    申请人： Doo Guen Song

    发明人： Doo Guen Song

    IPC分类号： G11C29/00 ,  H01L21/66 ,  H01L21/8242

    CPC分类号： H01L27/10894 ,  G11C11/401 ,  G11C29/006 ,  G11C2029/0403 ,  G11C2029/5002 ,  H01J2237/31701 ,  H01L22/20

    摘要： A method of testing ion implantation equipment verifies the level of ion implantation energy. The method includes implanting first conductive ions in an implantation region in a semiconductor substrate, implanting second conductive ions, having valence different from that of the first conductive ions, in the implantation region so as to produce a second well, and subsequently measuring a sheet resistance of the semiconductor substrate. The implanting of the second conductive ions may be carried out while varying the level of the ion implantation energy. By forming a twin well in this way, and then measuring the sheet resistance, the value of the sheet resistance can be precisely correlated to the amount of energy used to form a well.

    摘要翻译： 测试离子注入设备的方法验证了离子注入能量的水平。 该方法包括将第一导电离子注入到半导体衬底中的注入区域中，在注入区域中注入具有不同于第一导电离子的价态的第二导电离子，以便产生第二阱，随后测量薄层电阻 的半导体衬底。 可以在改变离子注入能量的水平的同时进行第二导电离子的注入。 通过以这种方式形成双井，然后测量薄层电阻，薄层电阻的值可以精确地与用于形成孔的能量的量相关。

    Method for monitoring an ion implanter and ion implanter having a shadow jig for performing the same
    3.
    发明授权
    Method for monitoring an ion implanter and ion implanter having a shadow jig for performing the same 失效
    用于监测离子注入机和离子注入机的方法，其具有用于执行该离子注入机的阴影夹具

    公开(公告)号：US06800863B2

    公开(公告)日：2004-10-05

    申请号：US10634756

    申请日：2003-08-06

    申请人： Chung-Sam Jun ,  Sun-Yong Choi ,  Dong-Chun Lee ,  Tae-kyoung Kim ,  Doo-Guen Song ,  Seung-Won Chae

    发明人： Chung-Sam Jun ,  Sun-Yong Choi ,  Dong-Chun Lee ,  Tae-kyoung Kim ,  Doo-Guen Song ,  Seung-Won Chae

    IPC分类号： H01J37317

    CPC分类号： H01J37/3045 ,  H01J37/3171

    摘要： A method for monitoring an ion implanter includes positioning a substrate behind an interceptor for intercepting a portion of an ion beam to be irradiated toward the substrate, irradiating a first ion beam toward the substrate to form a first shadow on the substrate, rotating the substrate about a central axis of the substrate, irradiating a second ion beam toward the substrate to form a second shadow on the substrate, and measuring a dosage of ions implanted into the substrate to monitor whether the rotation of the substrate has been normally performed. Preferably, a dosage of ions implanted into the substrate is calculated from a thermal wave value of the substrate and whether the rotation of the substrate has been normally performed is monitored by comparing the thermal wave value corresponding to the first shadow with a reference thermal wave value.

    摘要翻译： 一种用于监测离子注入机的方法包括将基片定位在拦截器后面，用于截取要朝向基板照射的离子束的一部分，向基板照射第一离子束，以在基板上形成第一阴影， 基板的中心轴，向基板照射第二离子束，在基板上形成第二阴影，并测量注入到基板中的离子的剂量，以监测基板的旋转是否正常进行。 优选地，通过将​​对应于第一阴影的热波值与参考热波值进行比较来监测从衬底的热波值和衬底的旋转是否正常地进行的植入衬底中的离子的剂量 。