Invention Grant
- Patent Title: Process for producing a semiconductor light-emitting device
- Patent Title (中): 半导体发光装置的制造方法
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Application No.: US11093807Application Date: 2005-03-30
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Publication No.: US07122394B2Publication Date: 2006-10-17
- Inventor: Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
- Applicant: Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Bell, Boyd & Lloyd LLC
- Priority: JPP2000-217508 20000718; JPP2000-217663 20000718; JPP2000-217799 20000718; JPP2000-218034 20000718; JPP2000-218101 20000718; JPP2001-200183 20010629
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L31/036
Abstract:
Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.
Public/Granted literature
- US20050170538A1 Process for producing a semiconductor light-emitting device Public/Granted day:2005-08-04
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