发明授权
US07125799B2 Method and device for processing substrate, and apparatus for manufacturing semiconductor device
失效
用于处理衬底的方法和装置以及用于制造半导体器件的装置
- 专利标题: Method and device for processing substrate, and apparatus for manufacturing semiconductor device
- 专利标题(中): 用于处理衬底的方法和装置以及用于制造半导体器件的装置
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申请号: US10473205申请日: 2002-12-27
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公开(公告)号: US07125799B2公开(公告)日: 2006-10-24
- 发明人: Shintaro Aoyama , Masanobu Igeta , Hiroshi Shinriki , Tsuyoshi Takahashi
- 申请人: Shintaro Aoyama , Masanobu Igeta , Hiroshi Shinriki , Tsuyoshi Takahashi
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Crowell & Moring LLP
- 优先权: JP2002-014773 20020123
- 国际申请: PCT/JP02/13851 WO 20021227
- 国际公布: WO03/063220 WO 20030731
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A substrate processing method includes the step of removing carbon from a silicon substrate surface and planarizing the silicon substrate surface from which carbon has been removed.