公开(公告)号：US06927112B2

公开(公告)日：2005-08-09

申请号：US10310949

申请日：2002-12-06

申请人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

发明人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/8238

CPC分类号： H01L21/28185 ,  C23C16/34 ,  C23C16/405 ,  C23C16/482 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/316 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/67017 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.

摘要翻译： 对绝缘膜进行氮化的方法包括以下步骤：通过在绝缘膜的表面供给氮自由基，通过高频等离子体形成氮自由基，并在其中含有氧的绝缘膜的表面发生氮化。

公开(公告)号：US20080139000A1

公开(公告)日：2008-06-12

申请号：US11972503

申请日：2008-01-10

申请人： Masanobu IGETA ,  Shintaro Aoyama ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

发明人： Masanobu IGETA ,  Shintaro Aoyama ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

IPC分类号： H01L21/31

CPC分类号： H01L21/28185 ,  C23C16/34 ,  C23C16/405 ,  C23C16/482 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/316 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/67017 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.

摘要翻译： 对绝缘膜进行氮化的方法包括以下步骤：通过在绝缘膜的表面供给氮自由基，通过高频等离子体形成氮自由基，并在其中含有氧的绝缘膜的表面发生氮化。

公开(公告)号：US07125799B2

公开(公告)日：2006-10-24

申请号：US10473205

申请日：2002-12-27

申请人： Shintaro Aoyama ,  Masanobu Igeta ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

发明人： Shintaro Aoyama ,  Masanobu Igeta ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

IPC分类号： H01L21/44

CPC分类号： H01L21/67167 ,  H01L21/02046 ,  H01L21/0214 ,  H01L21/02159 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/302 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67225 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A substrate processing method includes the step of removing carbon from a silicon substrate surface and planarizing the silicon substrate surface from which carbon has been removed.

摘要翻译： 基板处理方法包括从硅衬底表面去除碳并且平坦化已经除去碳的硅衬底表面的步骤。

公开(公告)号：US20050170541A1

公开(公告)日：2005-08-04

申请号：US11086396

申请日：2005-03-23

申请人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

发明人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki ,  Tsuyoshi Takahashi

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51

CPC分类号： H01L21/28185 ,  C23C16/34 ,  C23C16/405 ,  C23C16/482 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/316 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/67017 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.

公开(公告)号：US07497964B2

公开(公告)日：2009-03-03

申请号：US11432332

申请日：2006-05-12

申请人： Masanobu Igeta ,  Kazuyoshi Yamazaki ,  Shintaro Aoyama ,  Hiroshi Shinriki

发明人： Masanobu Igeta ,  Kazuyoshi Yamazaki ,  Shintaro Aoyama ,  Hiroshi Shinriki

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： H01J37/32009 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31662

摘要： A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container 21, and ultraviolet light is irradiated to the gas while gas inside the processing container 21 is being discharged. After that, a remote plasma source 26 is driven to ignite plasma.

摘要翻译： 一种解决在没有被内部保持抽吸到真空中的处理容器的重新启动操作中等离子体不会点燃的问题的方法。 含有氧的气体通过处理容器21，在排出处理容器21内的气体的同时照射气体。 之后，驱动远程等离子体源26以点燃等离子体。

公开(公告)号：US20060009044A1

公开(公告)日：2006-01-12

申请号：US10527642

申请日：2003-09-19

申请人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki

发明人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L21/02274 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/67017

摘要： A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, and a gas-supplying unit (30) which is connected to the radical-forming unit. The gas-supplying unit (30) controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.

摘要翻译： 基板处理装置（100,40）包括用于通过高频等离子体形成氮自由基和氧自由基的自由基形成单元（26），处理容器（21），其中待处理的基板（W） 和与自由基形成单元连接的气体供给单元（30）。 气体供给单元（30）控制含有氮的第一原料气体和含有氧的第二原料气体的混合比，并将所需混合比例的混合气体与自由基形成单元供给。 通过将以受控混合比混合的氮自由基和氧自由基提供给基板的表面，在基板的表面上形成具有所需氮浓度的绝缘膜。

公开(公告)号：US20070190802A1

公开(公告)日：2007-08-16

申请号：US11735823

申请日：2007-04-16

申请人： SHINTARO AOYAMA ,  Hiroshi Shinriki ,  Masanobu Igeta

发明人： SHINTARO AOYAMA ,  Hiroshi Shinriki ,  Masanobu Igeta

IPC分类号： H01L21/31

CPC分类号： H01L21/02238 ,  C23C16/452 ,  C23C16/45589 ,  C23C16/482 ,  H01J37/32009 ,  H01J37/32321 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/67017

摘要： A radical source is movably provided in a processing vessel holding a substrate, and the location or driving energy of the radical source is set such that the film formed on the substrate has a uniform thickness. Further, a radical source is provided at a first side of the substrate and a radical flow is formed such that the radical flow flows from the first side of the substrate surface to the other side. By optimizing the condition of the radical flow, the film formed on the substrate has a uniform thickness.

摘要翻译： 自由基源可移动地设置在保持基板的处理容器中，并且自由基源的位置或驱动能量被设定为使得形成在基板上的膜具有均匀的厚度。 此外，在基板的第一侧设置自由基源，并且形成自由基流，使得自由基流从基板表面的第一侧流动到另一侧。 通过优化自由基流的条件，形成在基板上的膜具有均匀的厚度。

公开(公告)号：US07378358B2

公开(公告)日：2008-05-27

申请号：US10527642

申请日：2003-09-19

申请人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki

发明人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki

IPC分类号： H01L21/469

CPC分类号： H01L21/02274 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/67017

摘要： A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, and a gas-supplying unit (30) which is connected to the radical-forming unit. The gas-supplying unit (30) controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.

摘要翻译： 基板处理装置（100,40）包括用于通过高频等离子体形成氮自由基和氧自由基的自由基形成单元（26），处理容器（21），其中待处理的基板（W） 和与自由基形成单元连接的气体供给单元（30）。 气体供给单元（30）控制含有氮的第一原料气体和含有氧的第二原料气体的混合比，并将所需混合比例的混合气体与自由基形成单元供给。 通过将以受控混合比混合的氮自由基和氧自由基提供给基板的表面，在基板的表面上形成具有所需氮浓度的绝缘膜。

公开(公告)号：US20050079720A1

公开(公告)日：2005-04-14

申请号：US10967284

申请日：2004-10-19

申请人： Shintaro Aoyama ,  Masanobu Igeta ,  Hiroshi Shinriki

发明人： Shintaro Aoyama ,  Masanobu Igeta ,  Hiroshi Shinriki

IPC分类号： H01L21/28 ,  H01L21/306 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  H01L21/31 ,  H01L21/311 ,  H01L21/469

CPC分类号： H01L21/28194 ,  H01L21/02046 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/0231 ,  H01L21/02312 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  Y10S438/906

摘要： A substrate processing method includes the steps of removing carbon from a surface of a silicon substrate by irradiating an ultraviolet light on the surface in an essentially ultraviolet nonreactive gas atmosphere and forming an oxide film or an oxynitride film on the surface of the silicon substrate by irradiating an ultraviolet light thereon in an essentially ultraviolet reactive gas atmosphere. Further, a computer readable storage medium stores therein a program for controlling the substrate processing method.

摘要翻译： 基板处理方法包括以下步骤：通过在基本上为紫外线的非反应性气体气氛中在表面上照射紫外光从硅衬底的表面除去碳，并通过照射在硅衬底的表面上形成氧化膜或氧氮化物膜 在其上的基本上紫外反应气体气氛中的紫外光。 此外，计算机可读存储介质中存储有用于控制衬底处理方法的程序。

公开(公告)号：US07129185B2

公开(公告)日：2006-10-31

申请号：US10967284

申请日：2004-10-19

申请人： Shintaro Aoyama ,  Masanobu Igeta ,  Hiroshi Shinriki

发明人： Shintaro Aoyama ,  Masanobu Igeta ,  Hiroshi Shinriki

IPC分类号： H01L21/46

CPC分类号： H01L21/28194 ,  H01L21/02046 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/0231 ,  H01L21/02312 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  Y10S438/906

摘要： A substrate processing method includes the steps of removing carbon from a surface of a silicon substrate by irradiating an ultraviolet light on the surface in an essentially ultraviolet nonreactive gas atmosphere and forming an oxide film or an oxynitride film on the surface of the silicon substrate by irradiating an ultraviolet light thereon in an essentially ultraviolet reactive gas atmosphere. Further, a computer readable storage medium stores therein a program for controlling the substrate processing method.

摘要翻译： 基板处理方法包括以下步骤：通过在基本上为紫外线的非反应性气体气氛中在表面上照射紫外光从硅衬底的表面除去碳，并通过照射在硅衬底的表面上形成氧化膜或氧氮化物膜 在其上的基本上紫外反应气体气氛中的紫外光。 此外，计算机可读存储介质中存储有用于控制衬底处理方法的程序。