Invention Grant
- Patent Title: Method for etching a thin metal layer
- Patent Title (中): 蚀刻薄金属层的方法
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Application No.: US10704498Application Date: 2003-11-06
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Publication No.: US07129182B2Publication Date: 2006-10-31
- Inventor: Justin K. Brask , Mark L. Doczy , Jack Kavalieros , Uday Shah , Matthew V. Metz , Robert S. Chau , Robert B. Turkot, Jr.
- Applicant: Justin K. Brask , Mark L. Doczy , Jack Kavalieros , Uday Shah , Matthew V. Metz , Robert S. Chau , Robert B. Turkot, Jr.
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakey, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for etching a metal layer is described. That method comprises forming a metal layer on a substrate, then exposing part of the metal layer to a wet etch chemistry that comprises an active ingredient with a diameter that exceeds the thickness of the metal layer.
Public/Granted literature
- US20050101134A1 Method for etching a thin metal layer Public/Granted day:2005-05-12
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