发明授权
- 专利标题： Reliable low-k interconnect structure with hybrid dielectric
- 专利标题（中）： 具有混合电介质的可靠的低k互连结构
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申请号： US10901868申请日： 2004-07-29
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公开(公告)号： US07135398B2公开(公告)日： 2006-11-14
- 发明人: John A. Fitzsimmons , Stephen E. Greco , Jia Lee , Stephen M. Gates , Terry Spooner , Matthew S. Angyal , Habib Hichri , Theordorus E. Standaert , Glenn A. Biery
- 申请人： John A. Fitzsimmons , Stephen E. Greco , Jia Lee , Stephen M. Gates , Terry Spooner , Matthew S. Angyal , Habib Hichri , Theordorus E. Standaert , Glenn A. Biery
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Lisa U. Jaklitsch
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.
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