Invention Grant
- Patent Title: Sensitivity enhanced biomolecule field effect transistor
- Patent Title (中): 灵敏度增强的生物分子场效应晶体管
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Application No.: US11057642Application Date: 2005-02-14
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Publication No.: US07151301B2Publication Date: 2006-12-19
- Inventor: Kyu-tae Yoo , Geun-bae Lim , Joon-ho Kim , Kak Namkoong
- Applicant: Kyu-tae Yoo , Geun-bae Lim , Joon-ho Kim , Kak Namkoong
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2004-0011321 20040220
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
There is provided a biomolecule FET enhancing a sensitivity. The biomolecule FET includes a substrate, first and second impurity regions formed on both sides of the substrate, and doped with impurities of a polarity opposite to that of the substrate, a gate formed on the substrate and being in contact with the first and second impurity regions, and a probe biomolecule attached to the gate. A region of the gate adjacent to the first impurity region is wider than a region thereof adjacent to the second impurity region. A density of the probe biomolecule attached to the surface of the gate is increased, and when detecting a level of hybridization of the probe biomolecule and the target biomolecule, its sensitivity is improved.
Public/Granted literature
- US20050199917A1 Sensitivity enhanced biomolecule field effect transistor Public/Granted day:2005-09-15
Information query
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