Method of fabricating deep trench capacitor

Invention Grant

US07163858B2 Method of fabricating deep trench capacitor 有权

Title translation: 制造深沟槽电容器的方法

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Patent Title: Method of fabricating deep trench capacitor
Patent Title (中): 制造深沟槽电容器的方法
Application No.: US10904479

Application Date: 2004-11-12
Publication No.: US07163858B2

Publication Date: 2007-01-16
Inventor: Chao-Hsi Chung
Applicant: Chao-Hsi Chung
Applicant Address: TW Hsinchu
Assignee: ProMOS Technologies Inc.
Current Assignee: ProMOS Technologies Inc.
Current Assignee Address: TW Hsinchu
Agency: Jiang Chyun IP Office
Priority: TW93127240A 20040909
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L21/336

Method of fabricating deep trench capacitor

Abstract:

A method of fabrication deep trench capacitors includes forming a plurality of deep trenches in a substrate. A bottom electrode is formed in the substrate surrounding the bottom of each deep trench. A capacitor dielectric layer and a first conductive layer are formed at the bottom of each deep trench. A collar oxide layer is formed on the sidewall of the deep trench exposed by the first conductive layer. A second conductive layer fills each deep trench. An opening is formed in a region predetermined for an isolation structure between adjacent deep trenches, wherein the depth of the opening is greater than that of the isolation structure. An isolation layer is filled in the opening.

Abstract(Chinese):

制造深沟槽电容器的方法包括在衬底中形成多个深沟槽。底部电极形成在每个深沟槽的底部周围的基板中。在每个深沟槽的底部形成电容器电介质层和第一导电层。在由第一导电层暴露的深沟槽的侧壁上形成环状氧化物层。第二导电层填充每个深沟槽。在相邻深沟槽之间的隔离结构预定的区域中形成开口，其中开口的深度大于隔离结构的深度。隔离层填充在开口中。

Public/Granted literature

US20060051916A1 DEEP TRENCH CAPACITOR AND METHOD OF FABRICATING THEREOF Public/Granted day:2006-03-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）