发明授权
- 专利标题: Semiconductor device and method for manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11037262申请日: 2005-01-19
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公开(公告)号: US07164208B2公开(公告)日: 2007-01-16
- 发明人: Kazuyuki Kainou , Masatoshi Yagoh , Kimihito Kuwabara , Katsumi Ohtani
- 申请人: Kazuyuki Kainou , Masatoshi Yagoh , Kimihito Kuwabara , Katsumi Ohtani
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Stevens, Davis, Miller & Mosher, LLP
- 优先权: JP2004-011842 20040120; JP2004-334198 20041118
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52
摘要:
There is provided a semiconductor device in which the junction strength of land portions and external terminals is increased, the disconnection of the external terminal is surely prevented, and the connection reliability is ensured over an extended period of time. An insulating resin layer which insulates metal wires from one another is formed on a semiconductor element, an end portion of the metal wire is connected to an electrode on the semiconductor element, the other end portion of the metal wire is connected to an external terminal to form a land, the entire surface of the semiconductor element except the connecting portions of the lands is covered with a surface-layer resin layer, and a projection is provided on the top surface of a land portion of at least one of the lands. Because of this, after their soldering, the external terminal holds the perimeter of the projection on the land portion, so that the external terminal can be surely connected to the land portion. As a result, the semiconductor device which ensures their connection reliability over an extended period of time can be obtained.
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