Invention Grant
- Patent Title: Pulsed plasma processing method and apparatus
- Patent Title (中): 脉冲等离子体处理方法和装置
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Application No.: US10076099Application Date: 2002-02-15
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Publication No.: US07166233B2Publication Date: 2007-01-23
- Inventor: Wayne L. Johnson , Eric J. Strang
- Applicant: Wayne L. Johnson , Eric J. Strang
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/306

Abstract:
In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the chamber and allowing the field to interact with the process gas, the electromagnetic field is controlled to have an energy level which varies cyclically between at least two values each sufficient to maintain the plasma, such that each energy level value is associated with performance of a respectively different treatment process on the substrate.
Public/Granted literature
- US20020160125A1 Pulsed plasma processing method and apparatus Public/Granted day:2002-10-31
Information query
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